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參數(shù)資料
| 型號： | FDC610PZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel PowerTrench㈢ MOSFET |
| 中文描述： | 4.9 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, SUPERSOT-6 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 412K |
| 代理商： | FDC610PZ |
tm
August 2007
F
2007 Fairchild Semiconductor Corporation
FDC610PZ Rev.B
www.fairchildsemi.com
1
FDC610PZ
P-Channel PowerTrench
MOSFET
–30V, –4.9A, 42m
Features
Max r
DS(on)
= 42m
at V
GS
= –10V, I
D
= –4.9A
Max r
DS(on)
= 75m
at V
GS
= –4.5V, I
D
= –3.7A
Low gate charge (17nC typical).
High performance trench technology for extremely low r
DS(on).
SuperSOT
TM
–6 package: small footprint (72% smaller than
standard SO–8) low profile (1mm thick).
RoHS Compliant
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
process that has
been especially tailored to minimize the on-state resistance and
yet maintain low gate charge for superior switching performance.
These devices are well suited for battery power applications:
load switching and power management,
battery charging
circuits,
and DC/DC conversion.
Application
DC - DC
Conversion
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
–30
±25
–4.9
–20
1.6
0.8
–55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Note 1a)
-Pulsed
Power Dissipation (Note 1a)
Power Dissipation (Note 1b)
Operating and Storage Junction Temperature Range
I
D
A
P
D
W
T
J
, T
STG
°
C
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Ambient (Note 1a)
78
°C/W
Thermal Resistance, Junction to Ambient (Note 1b)
156
Device Marking
.610Z
Device
FDC610PZ
Package
SSOT6
Reel Size
7’’
Tape Width
8mm
Quantity
3000units
SuperSOT
TM
-6
Pin 1
D
S
G
D
D
D
3
5
6
4
1
2
3
D
D
D
D
S
G
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| FDC6302P | Digital FET, Dual P-Channel |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDC610PZ | 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL MOSFET -30V 4.9mA |
| FDC610PZ_G | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR |
| FDC6301 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel , Digital FET |
| FDC6301N | 功能描述:MOSFET SSOT-6 N-CH 25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6301N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET NN CH 25V 0.22A SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NN CH, 25V, 0.22A, SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NN CH, 25V, 0.22A, SSOT6; Transistor Polarity:N Channel; Continuous Drain Current Id:220mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:850mV ;RoHS Compliant: Yes |
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