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參數(shù)資料
| 型號(hào)： | FDC610PZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | P-Channel PowerTrench㈢ MOSFET |
| 中文描述： | 4.9 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, SUPERSOT-6 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 412K |
| 代理商： | FDC610PZ |
F
FDC610PZ Rev
.
B
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= –250
μ
A, V
GS
= 0V
–30
V
I
D
= –250
μ
A, referenced to 25°C
–22
mV
/°
C
V
DS
= –24V, V
GS
= 0V
V
GS
= ±25V, V
DS
= 0V
–1
±10
μ
A
μ
A
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= –250
μ
A
–1
–2.2
–3
V
I
D
= –250
μ
A, referenced to 25°C
6
mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= –10V, I
D
= –4.9A
V
GS
= –4.5V, I
D
= –3.7A
V
GS
= –10V, I
D
= –4.9A, T
J
= 125°C
V
DD
= –10V, I
D
= –4.9A
36
58
50
15
42
75
60
m
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= –15V, V
GS
= 0V,
f = 1MHz
755
145
125
13
1005
195
190
pF
pF
pF
f = 1MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DD
= –15V, I
D
= –4.9A
V
GS
= –10V, R
GEN
= 6
7
4
14
10
53
37
24
13
ns
ns
ns
ns
nC
nC
nC
nC
33
23
17
9
2.9
4.3
V
GS
= 0V to –10V
V
GS
= 0V to –4.5V
V
DD
= –15V,
I
D
= –4.9A
Drain-Source Diode Characteristics
I
S
V
SD
t
rr
Q
rr
Notes:
1. R
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θ
JC
is
guaranteed by design while R
θ
CA
is determined by
the user's board design.
Maximum Continuous Drain-Source Diode Forward Current
Source to Drain Diode Forward Voltage V
GS
= 0V, I
S
= –1.3A (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
–1.3
–1.2
35
18
A
V
ns
nC
–0.8
19
9
I
F
= –4.9A, di/dt = 100A/
μ
s
2. Pulse Test: Pulse Width < 30
0
μ
s, Duty cycle < 2.0%.
a. 78°C/W when mounted on a
1 in
pad of 2 oz copper.
b. 156°C/W when mounted on a
minimum pad of 2 oz copper.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC610PZ | 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL MOSFET -30V 4.9mA |
| FDC610PZ_G | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR |
| FDC6301 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel , Digital FET |
| FDC6301N | 功能描述:MOSFET SSOT-6 N-CH 25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6301N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET NN CH 25V 0.22A SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NN CH, 25V, 0.22A, SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NN CH, 25V, 0.22A, SSOT6; Transistor Polarity:N Channel; Continuous Drain Current Id:220mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:850mV ;RoHS Compliant: Yes |
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