參數(shù)資料
型號(hào): FDC604
廠商: Fairchild Semiconductor Corporation
英文描述: P-Channel 1.8V Specified PowerTrench MOSFET
中文描述: P溝道MOSFET的1.8指定的PowerTrench
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 359K
代理商: FDC604
FDC604P Rev B(W)
Typical Characteristics
0
1
2
3
4
5
0
5
10
15
20
25
Q
g
, GATE CHARGE (nC)
I
D
= -5.5A
V
DS
= -5V
-15V
-10V
0
500
1000
1500
2000
2500
3000
3500
0
5
10
15
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
DC
1s
100ms
10ms
1ms
100
μ
s
R
DS(ON)
LIMIT
V
GS
= -4.5V
SINGLE PULSE
R
θ
JA
= 156
o
C/W
T
A
= 25
o
C
0
1
2
3
4
5
0.1
1
10
100
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R
θ
JA
= 156
o
C/W
T
A
= 25
o
C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, T IM E (sec)
r
T
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 156 °C /W
T
J
- T
A
t
θ
JA
(t)
D uty C ycle, D = t
1
/ t
2
P (pk)
t
1
S IN G LE PU LS E
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
F
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