參數(shù)資料
型號(hào): FDC604
廠商: Fairchild Semiconductor Corporation
英文描述: P-Channel 1.8V Specified PowerTrench MOSFET
中文描述: P溝道MOSFET的1.8指定的PowerTrench
文件頁(yè)數(shù): 3/8頁(yè)
文件大小: 359K
代理商: FDC604
FDC604P Rev B(W)
Typical Characteristics
0
5
10
15
20
0
1
2
3
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-1.5V
-2.5V
-2.0V
-1.8V
V
GS
= -4.5V
0.5
1
1.5
2
2.5
3
0
5
10
15
20
-I
D
, DRAIN CURRENT (A)
V
GS
= -1.5V
-2.0V
-1.8V
-4.5V
-2.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= -5.5A
V
GS
= -4.5V
0
0.03
0.06
0.09
0.12
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= -2.8 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
0
0.5
1
1.5
2
2.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
-
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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