參數(shù)資料
型號(hào)： FDC602
廠商： Fairchild Semiconductor Corporation
英文描述： P-Channel 2.5V Specified PowerTrench MOSFET
中文描述： P溝道MOSFET的為2.5V指定的PowerTrench
文件頁(yè)數(shù)： 2/6頁(yè)
文件大小： 216K
代理商： FDC602
FDC602P Rev A
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= –250
μ
A
V
DS
= –10 V,
V
GS
= 12 V,
V
GS
= –12 V
–12
V
μ
A
nA
nA
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
–1
100
–100
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= –250
μ
A
V
GS
= –4.5 V,
V
GS
= –2.5 V,
–0.6
–1.5
0.033
0.052
V
I
D
= –5.5 A
I
D
= –4.4 A
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
–1.3
–1.2
A
V
V
GS
= 0 V,
I
S
= –1.3 A
(Note 2)
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a. 78°C/W when mounted on a 1in
2
pad of 2oz copper on FR-4 board.
b. 156°C/W when mounted on a minimum pad.
2.
Pulse Test: Pulse Width
≤
=
300
μ
s, Duty Cycle
≤
=
2.0%
F
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