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參數(shù)資料
| 型號： | FDC3601N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N-Channel 100V Specified PowerTrench MOSFET |
| 中文描述： | 1000 mA, 100 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 91K |
| 代理商： | FDC3601N |
FDC3601N Rev C(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V,
I
D
= 250
μ
A
100
V
Breakdown Voltage Temperature
I
D
= 250
μ
A,Referenced to 25
°
C
105
mV/
°
C
V
DS
= 80 V,
V
GS
= 20 V,
V
GS
= –20 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
10
100
–100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= 250
μ
A,Referenced to 25
°
C
I
D
= 250
μ
A
2
2.6
4
V
Gate Threshold Voltage
–5
mV/
°
C
V
GS
= 10 V,
V
GS
= 6 V,
V
GS
= 10 V, I
D
= 1.0 A, T
J
= 125
°
C
V
GS
= 10 V,
V
DS
= 5V,
I
D
= 1.0 A
I
D
= 0.9 A
370
396
685
500
550
976
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
V
DS
= 10 V
I
D
= 1.0 A
3
A
S
3.6
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
153
5
1
pF
pF
pF
V
DS
= 50 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
8
4
11
6
3.7
0.8
1
16
8
20
12
5
ns
ns
ns
ns
nC
nC
nC
V
DD
= 50 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 50 V,
V
GS
= 10 V
I
D
= 1.0 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
0.8
1.2
A
V
V
GS
= 0 V,
I
S
= 0.8 A
(Note 2)
0.8
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a)
130
°
C/W when
mounted on a 0.125
in
pad of 2 oz.
copper.
b)
140°C/W when
mounted on a .004 in
2
pad of 2 oz copper
c)
180°C/W when mounted on a
minimum pad.
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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| FDC3601N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC3612 | 功能描述:MOSFET 100V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| FDC3612_F095 | 功能描述:MOSFET 100V 2.6A N-CH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC3616N | 功能描述:MOSFET 100V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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