參數(shù)資料
型號(hào): FDC3616N
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 100V N-Channel PowerTrench MOSFET
中文描述: 3.7 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SUPERSOT-6
文件頁(yè)數(shù): 1/7頁(yè)
文件大?。?/td> 173K
代理商: FDC3616N
January 2004
2004 Fairchild Semiconductor Corporation
FDC3616N Rev C1 (W)
FDC3616N
100V N-Channel PowerTrench
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS(ON)
and fast switching speed.
N-Channel
MOSFET
has
been
designed
Applications
DC/DC converter
Load Switching
Features
3.7 A, 100 V.
R
DS(ON)
= 70 m
@ V
GS
= 10 V
R
DS(ON)
= 80 m
@ V
GS
= 6.0 V
High performance trench technology for extremely
low R
DS(ON)
Low gate charge (23nC typical)
High power and current handling capability
Fast switching speed.
SuperSOT-6
TM
FLMP
S
S
S
G
S
S
3
2
1
4
5
6
Bottom Drain
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Ratings
100
±
20
3.7
20
2
1.1
55 to +150
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Maximum Power Dissipation
(Note 1a)
– Pulsed
(Note 1a)
W
(Note 1b)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
60
°
C/W
(Note 1b)
111
R
θ
JC
Thermal Resistance, Junction-to-Case
0.5
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.616
FDC3616N
7’’
8mm
3000 units
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDC3616N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
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