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參數(shù)資料
| 型號： | FDC3601N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N-Channel 100V Specified PowerTrench MOSFET |
| 中文描述： | 1000 mA, 100 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 91K |
| 代理商： | FDC3601N |
August 2001
2001 Fairchild Semiconductor Corporation
FDC3601N Rev C(W)
FDC3601N
Dual N-Channel 100V Specified PowerTrench
MOSFET
General Description
These N-Channel 100V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for
applications where the bigger more expensive SO-8
and TSSOP-8 packages are impractical.
Applications
Load switch
Battery protection
Power management
Features
1.0 A, 100 V.
R
DS(ON)
= 500 m
@ V
GS
= 10 V
R
DS(ON)
= 550 m
@ V
GS
= 6.0 V
Low gate charge (3.7nC typical)
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
SuperSOT
TM
-6 package: small footprint 72%
(smaller than standard SO-8); low profile (1mm thick).
D1
S2
G1
D2
S1
G2
SuperSOT -6
3
2
1
4
5
6
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
Ratings
100
±
20
1.0
4.0
0.96
0.9
0.7
55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
130
60
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
.601
FDC3601N
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC3601N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC3612 | 功能描述:MOSFET 100V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC3612 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC3612_F095 | 功能描述:MOSFET 100V 2.6A N-CH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC3616N | 功能描述:MOSFET 100V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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