參數(shù)資料
型號(hào)： FDC3512
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： 80V N-Channel PowerTrench MOSFET
中文描述： 3000 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-6
文件頁數(shù)： 1/5頁
文件大?。?/td> 133K
代理商： FDC3512
February 2002
FDC3512
80V N-Channel PowerTrench
MOSFET
2002 Fairchild Semiconductor Corporation
FDC3512 Rev B2 (W)
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS(ON)
and fast switching speed.
N-Channel
MOSFET
has
been
designed
Applications
DC/DC converter
Features
3.0 A, 80 V
R
DS(ON)
= 77 m
@ V
GS
= 10 V
R
DS(ON)
= 88 m
@ V
GS
= 6 V
High performance trench technology for extremely
low R
DS(ON)
Low gate charge (13nC typ)
High power and current handling capability
Fast switching speed
D
D
D
S
D
G
SuperSOT -6
TM
6
5
4
1
2
3
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Maximum Power Dissipation
P
D
Ratings
80
±
20
3.0
20
1.6
0.8
–55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
W
(Note 1b)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
78
30
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.352
FDC3512
7’’
8mm
3000 units
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDC3512 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDC3512_F095 功能描述:MOSFET 80V 3.0A N-CH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC3535 功能描述:MOSFET MOSFET; -80V P-Chan PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC3601N 功能描述:MOSFET Dual N-Ch 100V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC3601N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
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