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參數(shù)資料
| 型號(hào)： | FDC2612 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 200V N-Channel PowerTrench MOSFET |
| 中文描述： | 1100 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, SUPERSOT-6 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 201K |
| 代理商： | FDC2612 |
FDC2612 Rev B3(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V,
I
D
= 250
μ
A
200
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25
°
C
246
mV/
°
C
V
DS
= 160 V,
V
GS
= 20 V,
V
GS
= –20 V , V
DS
= 0 V
V
GS
= 0 V
V
DS
= 0 V
1
μ
A
nA
nA
100
–100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
Static Drain–Source
On Resistance
I
D(on)
On–State Drain Current
g
FS
Forward Transconductance
(Note 2)
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 10 V,
I
D
= 1.1 A
V
GS
= 10 V, I
D
= 1.1 A, T
J
= 125
°
C
V
GS
= 10 V,
V
DS
= 10 V
V
DS
= 10 V,
I
D
= 1.1 A
I
D
= 250
μ
A
2
4
4.5
V
Gate Threshold Voltage
–8.7
mV/
°
C
R
DS(on)
605
1133
4.4
725
1430
m
A
S
4
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
234
18
8
pF
pF
pF
V
DS
= 100 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
6
6
17
8
8
1.6
2.2
12
12
30
16
11
ns
ns
ns
ns
nC
nC
nC
V
DD
= 100 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 100 V,
V
GS
= 10 V
I
D
= 1.1 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
1.3
A
V
SD
V
GS
= 0 V,
I
S
= 1.3 A
(Note 2)
0.8
1.2
V
74.5
194
nS
nC
I
F
= 1.1A,
d
iF
/d
t
= 300 A/μs
(Note 2)
a)
78°C/W when
mounted on a 1in
2
pad
of 2 oz copper
b)
156°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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