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參數資料
| 型號： | FDC2512 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 150V N-Channel PowerTrench MOSFET |
| 中文描述： | 1400 mA, 150 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數： | 3/5頁 |
| 文件大?。?/td> | 176K |
| 代理商： | FDC2512 |
FDC2512 Rev B3(W)
Typical Characteristics
0
2
4
6
0
2
4
6
8
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
4.0V
4.5V
V
GS
= 10V
6.0V
0.9
1
1.1
1.2
1.3
1.4
0
1
2
3
4
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 4.0V
4.5V
5.0V
10V
6.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.2
0.6
1
1.4
1.8
2.2
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 1.4A
V
GS
=10V
0.2
0.3
0.4
0.5
0.6
0.7
0.8
3
4
5
6
7
8
9
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 0.7A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
2
4
6
8
2
3
4
5
6
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= -55
o
C
125
o
C
V
DS
= 25V
25
o
C
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDC2512 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC2512_F095 | 功能描述:MOSFET 200V 1.1A N-CH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC-25PF | 制造商:HRS 制造商全稱:HRS 功能描述:FD TYPE CONNECTOR FOR RIBBON CABLE |
| FDC-25SF | 制造商:HRS 制造商全稱:HRS 功能描述:FD TYPE CONNECTOR FOR RIBBON CABLE |
| FDC2612 | 功能描述:MOSFET 200V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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