參數(shù)資料
型號(hào)： FDB3652
廠(chǎng)商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： N-Channel PowerTrench MOSFET 100V, 61A, 16mз
中文描述： 9 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： TO-263AB, 3 PIN
文件頁(yè)數(shù)： 2/11頁(yè)
文件大?。?/td> 272K
代理商： FDB3652
2002 Fairchild Semiconductor Corporation
FDB3652 / FDP3652 / FDI3652 Rev. B
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gs2
Gate Charge Threshold to Plateau
Q
gd
Gate to Drain “Miller” Charge
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
= 25°C, L =
0.228mH, I
AS
= 40A.
2:
Pulse Width = 100s
Device Marking
FDB3652
FDP3652
FDI3652
Device
FDB3652
FDP3652
FDI3652
Package
TO-263AB
TO-220AB
TO-262AA
Reel Size
330mm
Tube
Tube
Tape Width
24mm
N/A
N/A
Quantity
800 units
50 units
50 units
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 80V
V
GS
= 0V
V
GS
= ±20V
105
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 61A, V
GS
= 10V
I
D
= 30A, V
GS
= 6V
I
D
= 61A, V
GS
= 10V,
T
J
= 175
o
C
2
-
-
-
4
V
r
DS(ON)
Drain to Source On Resistance
0.014
0.018
0.016
0.026
-
0.035
0.043
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
2880
390
100
41
5
15
10
10
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 50V
I
D
= 61A
I
g
= 1.0mA
53
6.5
-
-
-
-
-
-
-
V
DD
= 50V, I
D
= 61A
V
GS
= 10V, R
GS
= 6.8
-
-
-
-
-
-
-
146
-
-
-
-
107
ns
ns
ns
ns
ns
ns
12
85
26
45
-
V
SD
Source to Drain Diode Voltage
I
SD
= 61A
I
SD
= 30A
I
SD
= 61A, dI
SD
/dt = 100A/
μ
s
I
SD
= 61A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
62
45
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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