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參數(shù)資料
| 型號： | FDB2532 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 8 A, 150 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 275K |
| 代理商： | FDB2532 |
2002 Fairchild Semiconductor Corporation
FDB2532 / FDP2532 / FDI2532 Rev. B
F
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7515 and AN7517
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
T
A
= 25
°
C unless otherwise noted
0.1
1
10
100
1000
1
100
300
I
D
,
V
DS
, DRAIN T10
T
J
= MAX RATED
T
C
= 25
C
SINGLE PULSE
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
10
μ
s
10ms
1ms
DC
100
μ
s
1
10
100
0.001
0.01
0.1
1
200
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
t
AV
= 0
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
30
60
90
120
150
180
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
30
60
90
120
150
180
0.0
1.0
2.0
3.0
4.0
5.0
6.0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 6V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5V
T
C
= 25
o
C
V
GS
= 7V
V
GS
= 10V
13
14
15
16
17
18
0
20
40
60
80
I
D
, DRAIN CURRENT (A)
V
GS
= 10V
D
)
V
GS
= 6V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
2.5
3.0
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
=33A
PULSE DURATION = 80
μ
s
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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| FDB2532_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 150V, 79A, 16m?? |
| FDB2532_F085 | 功能描述:MOSFET 150V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| FDB2532-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDB2532 Series 150 V 0.075 Ohms N-Channel PowerTrench Mosfet - TO-263AB |
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