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參數(shù)資料
| 型號： | FDI33N25TU |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 250V N-Channel MOSFET |
| 中文描述： | 33 A, 250 V, 0.094 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | I2PAK-3 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 824K |
| 代理商： | FDI33N25TU |
2006 Fairchild Semiconductor Corporation
FDB33N25 / FDI33N25 Rev A
1
www.fairchildsemi.com
F
May 2006
UniFET
TM
FDB33N25 / FDI33N25
250V N-Channel MOSFET
Features
33A, 250V, R
DS(on)
= 0.094
Ω
@V
GS
= 10 V
Low gate charge ( typical 36.8 nC)
Low C
rss
( typical 39 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
2
-PAK
FDB Series
I
2
-PAK
FDI Series
G
S
D
G
S
D
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
FDB33N25 / FDI33N25
Unit
V
DSS
I
D
Drain-Source Voltage
250
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
33
20.4
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
132
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
918
mJ
Avalanche Current
(Note 1)
33
A
Repetitive Avalanche Energy
(Note 1)
23.5
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
235
1.89
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Thermal Characteristics
Symbol
Parameter
Min.
Max.
Unit
R
θ
JC
R
θ
JA
*
R
θ
JA
* When mounted on the minimum pad size recommended (PCB Mount)
Thermal Resistance, Junction-to-Case
--
0.53
°
C/W
Thermal Resistance, Junction-to-Ambient*
--
40
°
C/W
Thermal Resistance, Junction-to-Ambient
--
62.5
°
C/W
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