參數(shù)資料
型號： FDI3652
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench MOSFET 100V, 61A, 16mз
中文描述： 9 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
封裝： TO-262AA, 3 PIN
文件頁數(shù)： 1/11頁
文件大?。?/td> 272K
代理商： FDI3652
2002 Fairchild Semiconductor Corporation
October 2002
FDB3652 / FDP3652 / FDI3652 Rev. B
F
FDB3652 / FDP3652 / FDI3652
N-Channel PowerTrench
MOSFET
100V, 61A, 16m
Features
r
DS(ON)
= 14m
(Typ.), V
GS
= 10V, I
D
= 61A
Q
g
(tot) = 41nC (Typ.), V
GS
= 10V
Low Miller Charge
Low Q
RR
Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
Formerly developmental type 82769
Applications
DC/DC Converters and Off-line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
Direct Injection / Diesel Injection Systems
42V Automotive Load Control
Electronic Valve Train Systems
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
Symbol
V
DSS
V
GS
Parameter
Ratings
100
±20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 10V)
Continuous (T
amb
= 25
o
C, V
GS
= 10V) with R
θ
JA
= 43
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
61
43
9
A
A
A
A
mJ
W
W/
o
C
o
C
Figure 4
182
150
1.0
-55 to 175
E
AS
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-220, TO-263, TO-262
Thermal Resistance Junction to Ambient TO-220, TO-263, TO-262 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
1.0
62
43
o
C/W
o
C/W
o
C/W
D
G
S
TO-263AB
FDB SERIES
GATE
SOURCE
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
DRAIN
(FLANGE)
GATE
DRAIN
SOURCE
GATE
DRAIN
SOURCE
DRAIN
(FLANGE)
TO-262AA
FDI SERIES
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