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參數(shù)資料
| 型號： | FDA8440 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench㈢ MOSFET |
| 中文描述： | 30 A, 40 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, TO-3PN, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 309K |
| 代理商： | FDA8440 |
3
www.fairchildsemi.com
FDA8440 Rev. A
F
M
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
and Temperatue
1.60
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
0
2
4
6
1
10
100
-55
o
C
150
o
C
* Notes :
1. V
DS
= 20V
2. 250
μ
s Pulse Test
25
o
C
I
D
,
V
GS
,Gate-Source Voltage[V]
400
0.1
1
1
10
100
0.4
* Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
V
GS
=
10.0 V
7.0 V
5.0 V
3.5 V
3.0 V
2.5 V
I
D
,
V
DS
,Drain-Source Voltage[V]
0.04
400
0.3
0.6
0.9
1.2
1
10
100
1000
150
o
C
I
S
,
V
SD
, Body Diode Forward Voltage [V]
25
o
C
Notes:
1. V
GS
= 0V
2. 250
μ
s Pulse Test
0
50
100
150
200
250
1.45
1.50
1.55
* Note : T
J
= 25
o
C
V
GS
= 4.5V
V
GS
= 10V
R
D
[
m
Ω
]
,
D
I
D
, Drain Current [A]
10
-1
10
0
10
1
0
6000
12000
18000
24000
30000
C
oss
C
iss
C
iss
= C
gs
+ C
gd
(
C
ds
= shorted
)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
* Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
C
V
DS
, Drain-Source Voltage [V]
20
0
100
Q
g
, Total Gate Charge [nC]
200
300
400
0
2
4
6
8
10
* Note : I
D
= 80A
V
DS
= 25V
V
DS
= 20V
V
DS
= 15V
V
G
,
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDA8440_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
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| FDA9F2S50T2X | 制造商:Positronic Industries 功能描述: |
| FDA-9PF | 制造商:HRS 制造商全稱:HRS 功能描述:FD TYPE CONNECTOR FOR RIBBON CABLE |
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