參數(shù)資料
型號(hào)： FDAF59N30
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 300V N-Channel MOSFET
中文描述： 34 A, 300 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-3PF, 3 PIN
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 772K
代理商： FDAF59N30
2006 Fairchild Semiconductor Corporation
FDAF59N30 Rev. A
1
www.fairchildsemi.com
F
October 2006
UniFET
TM
FDAF59N30
300V N-Channel MOSFET
Features
34A, 300V, R
DS(on)
= 0.056
@V
GS
= 10 V
Low gate charge ( typical 77 nC)
Low C
rss
( typical 80 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
D
G
S
TO-3PF
FDAF Series
G
S
D
Symbol
Parameter
FDAF59N30
Unit
V
DSS
I
D
Drain-Source Voltage
300
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
34
20
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
136
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
1734
mJ
Avalanche Current
(Note 1)
34
A
Repetitive Avalanche Energy
(Note 1)
16.1
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
161
1.3
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Symbol
Parameter
Min.
Max.
Unit
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
--
0.77
°
C/W
Thermal Resistance, Junction-to-Ambient
--
40
°
C/W
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