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參數(shù)資料
| 型號： | FDA8440 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench㈢ MOSFET |
| 中文描述： | 30 A, 40 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, TO-3PN, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 309K |
| 代理商： | FDA8440 |
2
www.fairchildsemi.com
FDA8440 Rev. A
F
M
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
NOTES:
1: Starting T
J
= 25
°
C, L = 200
μ
H, I
AS
= 64A, V
DD
= 36V, V
GS
= 10V.
2: Pulse width = 100s
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDA8440
FDA8440
TO-3PN
N/A
N/A
30units
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
V
GS
= 0V, I
D
= 250
μ
A
V
DS
= 32V
40
--
--
V
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V
--
--
1
μ
A
T
C
= 150
o
C
--
--
250
μ
A
I
GSS
On Characteristics
Gate to Body Leakage Current
V
GS
= ±20V
--
--
±100
nA
V
GS(th)
Gate to Source Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 4.5V, I
D
= 80A
V
GS
= 10V, I
D
= 80A
V
GS
= 10V, I
D
= 80A,
T
C
= 175
o
C
1
--
3
V
R
DS(on)
Static Drain-Source On-Resistance
--
1.56
2.2
m
Ω
--
1.46
2.1
--
2.82
4.1
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Q
g(tot)
Q
g(2)
Q
gs
Q
gs2
Q
gd
Switching Characteristics
(V
GS
= 10V)
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
--
18600
24740
pF
Output Capacitance
--
1840
2450
pF
Reverse Transfer Capacitance
--
1400
2100
pF
Gate Resistance
V
GS
= 0.5V, f = 1MHz
V
GS
= 0V to 10V
V
GS
= 0V to 2V
--
1.1
--
Ω
Total Gate Charge at 10V
V
DD
= 20V
I
D
= 80A
I
g
= 1.0mA
--
345
450
nC
Threshold Gate Charge
--
32.5
--
nC
Gate to Source Gate Charge
--
49
--
nC
Gate Charge Threshold to Plateau
--
42
--
nC
Gate to Drain “Miller” Charge
--
74
--
nC
t
ON
t
d(on)
t
r
t
d(off)
t
f
t
OFF
Drain-Source Diode Characteristics and Maximum Ratings
Turn-On Time
V
DD
= 20V,I
D
= 80A
V
GS
= 10V, R
GEN
= 7
Ω
--
175
360
ns
Turn-On Delay Time
--
43
95
ns
Rise Time
--
130
275
ns
Turn-Off Delay Time
--
435
875
ns
Fall Time
--
290
590
ns
Turn-Off Time
--
730
1470
ns
V
SD
Source to Drain Diode Voltage
I
SD
= 80A
I
SD
= 40A
I
SD
= 75A, dI
SD
/dt = 100A/
μ
s
I
SD
= 75A, dI
SD
/dt = 100A/
μ
s
--
--
1.25
V
--
--
1.0
V
t
rr
Q
RR
Reverse Recovery Time
--
59
--
ns
Reverse Recovery Charge
--
77
--
nC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDA8440_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDA96N20 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDA9F2S50T2X | 制造商:Positronic Industries 功能描述: |
| FDA-9PF | 制造商:HRS 制造商全稱:HRS 功能描述:FD TYPE CONNECTOR FOR RIBBON CABLE |
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