- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375764 > FDAF69N25 (FAIRCHILD SEMICONDUCTOR CORP) 250V N-Channel MOSFET PDF資料下載
參數(shù)資料
| 型號： | FDAF69N25 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 250V N-Channel MOSFET |
| 中文描述： | 34 A, 250 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3PF, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 635K |
| 代理商： | FDAF69N25 |
2005 Fairchild Semiconductor Corporation
FDAF69N25 Rev. A
1
www.fairchildsemi.com
F
September 2005
UniFET
TM
FDAF69N25
250V N-Channel MOSFET
Features
34A, 250V, R
DS(on)
= 0.041
@V
GS
= 10 V
Low gate charge ( typical 77 nC)
Low Crss ( typical 84 pF)
Fast switching
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switching DC/DC converters and switched mode power
supplies.
Absolute Maximum Ratings
Thermal Characteristics
{
{
S
{
z
z
z
D
G
TO-3PF
FQAF Series
G
S
D
Symbol
Parameter
FDAF69N25
Unit
V
DSS
V
DS(Avalanche)
Drain-Source Voltage
250
V
Repetitive Avalanche Voltage
(Note 1)
(Note 2)
300
V
I
D
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
34
21.5
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
136
A
Gate-Source Voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
1894
mJ
Avalanche Current
(Note 1)
34
A
Repetitive Avalanche Energy
(Note 1)
11.5
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
115
0.93
W
W/
°
C
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Symbol
Parameter
Min.
Max.
Unit
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
--
1.08
°
C/W
°
C/W
°
C/W
Thermal Resistance, Case-to-Sink
0.24
--
Thermal Resistance, Junction-to-Ambient
--
40
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDAF75N28 | 280V N-Channel MOSFET |
| FDB035AN06A0 | N-Channel PowerTrench MOSFET 60V, 80A, 3.5mз |
| FDB045AN08 | N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5mз |
| FDB045AN08A0 | N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5mз |
| FDB050AN06A0 | N-Channel PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDAF75N28 | 功能描述:MOSFET 280V 46A NCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FD-AFM2 | 制造商:Panasonic Electric Works 功能描述:PHOLOELECTRIC SENSOR |
| FD-AFM2E | 制造商:Panasonic Electric Works 功能描述:FIBER SENSORAREA REFLECTIVE 10.85MM 2 制造商:Panasonic Electric Works 功能描述:THRU-BEAM TYPE FIBER |
| FDA-GP | 制造商:Hirose 功能描述:902-0011-3-00 EACH 制造商:Hirose 功能描述:FDA-GP |
| FDAL 246222 | 制造商:Signal Construct GmbH 功能描述:Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。