參數(shù)資料
型號(hào): F49L800BA-70T
廠(chǎng)商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類(lèi): DRAM
英文描述: 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
中文描述: 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝: 12 X 20 MM, TSOP1-48
文件頁(yè)數(shù): 5/47頁(yè)
文件大?。?/td> 435K
代理商: F49L800BA-70T
ES MT
F49L800UA/F49L800BA
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2007
Revision: 1.2 5/47
7. FUNCTIONAL DESCRIPTION
7.1 Device operation
This section describes the requirements and use
of the device bus operations, which are initiated
through the internal command register. The
register is composed of latches that store the
command, address and data information needed
to execute the command. The contents of the
register serve as inputs to the internal state
machine. The state machine outputs dictate the
function of the device. The F49L800UA
/F49L800BA features various bus operations as
Table 3.
Table 3. F49L800UA/F49L800BA Operation Modes Selection
ADDRESS
A8
|
A7
DQ8~DQ15
DESCRIPTION
CE
OE
WE
RESET
A18
|
A12
A11
|
A10
A9
A6
A5
|
A2
A1
A0
DQ0~DQ7
BYTE
=V
IH
BYTE
=V
IL
Reset(3)
X
X
X
L, Vss
±
0.3V(3)
X
High Z
High Z
High Z
Read
L
L
H
H
AIN
Dout
Dout
Write
L
H
L
H
AIN
DIN
DIN
DQ8~DQ14=
High Z
DQ15=A-1
Output Disable
L
H
H
H
X
High Z
High Z
High Z
Standby
V
CC
±
0.3V
X
X
V
CC
±
0.3V
X
High Z
High Z
High Z
Sector Protect(2)
L
H
L
V
ID
SA
X
X
X
L
X
H
L
DIN
X
X
Sector Unprotect(2)
L
H
L
V
ID
SA
X
X
X
H
X
H
L
DIN
X
X
Temporary sector unprotect
X
X
X
V
ID
AIN
DIN
DIN
High Z
Auto-select
See Table 4
Notes:
1.
L= Logic Low = V
IL
, H= Logic High = V
IH
, X= Don't Care, SA= Sector Address, V
ID
=11.5V to 12.5V.
AIN= Address In, DIN = Data In, Dout = Data Out.
2. The sector protect and unprotect functions may also be implemented via programming equipment.
3. See “Reset Mode” section.
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