參數(shù)資料
型號(hào): F49L800BA-70T
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類(lèi): DRAM
英文描述: 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
中文描述: 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝: 12 X 20 MM, TSOP1-48
文件頁(yè)數(shù): 22/47頁(yè)
文件大?。?/td> 435K
代理商: F49L800BA-70T
ES MT
10.2 Program/Erase Operation
Table 11.
WE
Controlled Program/Erase Operations(T
A
= 0C to 70C, V
CC
= 2.7V~3.6V)
F49L800UA/F49L800BA
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2007
Revision: 1.2 22/47
-70
-90
Symbol
Description
Min.
Max.
Min.
Max.
Unit
t
WC
Write Cycle Time (Note 1)
70
90
ns
t
AS
Address Setup Time
0
0
ns
t
AH
Address Hold Time
45
45
ns
t
DS
Data Setup Time
35
35
ns
t
DH
Data Hold Time
0
0
ns
t
OES
Output Enable Setup Time
0
0
ns
t
GHWL
Read Recovery Time Before
Write (
OE
High to
WE
l
ow)
0
0
ns
t
CS
CE
Setup Time
0
0
ns
t
CH
CE
Hold Time
0
0
ns
t
WP
Write Pulse Width
35
35
ns
t
WPH
Write Pulse Width High
30
30
ns
t
WHWH1
Programming Operation (Note 2)
(Byte program time)
9(typ.)
9(typ.)
us
t
WHWH2
Sector Erase Operation (Note 2)
0.7(typ.)
0.7(typ.)
sec
t
VCS
V
CC
Setup Time (Note 1)
50
50
us
t
RB
Recovery Time from RY/
BY
0
0
ns
t
busy
Program/Erase Valid to RY/
BY
Delay
90
90
ns
Notes :
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
F49L800BA-70TG 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
F49L800BA-70TIG 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
F49L800BA-90T 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
F49L800BA-90TG 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
F49L800BA-90TIG 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory