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參數(shù)資料
| 型號(hào)： | F3S49092 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET |
| 中文描述： | 20A/10A，12V的，0.060/0.140歐姆，邏輯層次，互補(bǔ)功率MOSFET |
| 文件頁(yè)數(shù)： | 9/14頁(yè) |
| 文件大?。?/td> | 395K |
| 代理商： | F3S49092 |
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2004 Fairchild Semiconductor Corporation
RF3S49092SM Rev. C
FIGURE 31. SWITCHING TIME AS A FUNCTION OF GATE
RESISTANCE
FIGURE 32. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 33. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 34. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 35. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 36. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves (P-Channel)
(Continued)
40
20
30
40
50
0
120
100
80
60
20
0
10
R
GS
, GATE TO SOURCE RESISTANCE (
)
S
t
D(ON)
t
D(OFF)
t
f
t
r
V
DD
= -6V, I
D
= -10A, R
L
= 0.62
0.8
1.0
1.2
1.4
1.6
-80
-40
0
40
80
120
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
μ
s, V
GS
= -5V, I
D
= -10A
DUTY CYCLE = 0.5% MAX
160
O
-80
-40
0
40
80
120
200
0.6
0.8
1.0
1.2
N
T
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= -250
μ
A
160
1.2
1.1
1.0
0.9
-80
-40
0
40
80
120
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= -250
μ
A
160
1200
900
300
00
-2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-4
-6
-8
-10
C
600
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
-10
-8
-6
-4
0
V
G
,
V
DD
= -9.6V
-2
9
12
15
0
Q
g
, GATE CHARGE (nC)
3
6
I
D
= -10A
I
D
= -6A
I
D
= -3A
WAVEFORMS IN
DESCENDING ORDER:
RF3S49092SM
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