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參數(shù)資料
| 型號(hào)： | F3S49092 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET |
| 中文描述： | 20A/10A，12V的，0.060/0.140歐姆，邏輯層次，互補(bǔ)功率MOSFET |
| 文件頁數(shù)： | 7/14頁 |
| 文件大小： | 395K |
| 代理商： | F3S49092 |
2004 Fairchild Semiconductor Corporation
RF3S49092SM Rev. C
FIGURE 20. GATE CHARGE TEST CIRCUIT
FIGURE 21. GATE CHARGE WAVEFORMS
Test Circuits and Waveforms (N-Channel)
(Continued)
R
L
V
GS
+
-
V
DS
V
DD
DUT
I
g(REF)
V
DD
Q
g(TH)
V
GS
= 1V
0
Q
g(5)
V
GS
= 5V
Q
g(TOT)
V
GS
= 10V
V
DS
V
GS
I
g(REF)
0
Typical Performance Curves (P-Channel)
FIGURE 22. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 23. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 24. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
175
-15
-5
0
25
50
75
100
125
175
-10
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
-2
10
-1
10
0
0.01
0.1
1
10
-4
10
1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
Z
θ
J
,
T
SINGLE PULSE
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
RF3S49092SM
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