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參數(shù)資料
| 型號(hào)： | F3S49092 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET |
| 中文描述： | 20A/10A，12V的，0.060/0.140歐姆，邏輯層次，互補(bǔ)功率MOSFET |
| 文件頁數(shù)： | 5/14頁 |
| 文件大?。?/td> | 395K |
| 代理商： | F3S49092 |
2004 Fairchild Semiconductor Corporation
RF3S49092SM Rev. C
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves (N-Channel)
(Continued)
0
2
3
4
5
1
0
10
20
30
40
50
175
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
6
7
V
DD
= 6V
25
o
C
50
100
150
200
0
0
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
,
I
D
= 5A
2
I
D
= 20A
I
D
= 10A
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
40
20
30
40
50
0
120
100
80
60
20
0
10
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
140
t
r
t
D(OFF)
t
D(ON)
t
f
V
DD
= 6V, I
D
= 20A, R
L
= 0.24
0.6
0.8
1.0
1.2
1.6
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
μ
s, V
GS
= 5V, I
D
= 20A
DUTY CYCLE = 0.5% MAX
200
1.4
O
-80
-40
0
40
80
120
160
0.6
0.8
1.0
1.2
N
T
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
200
1.2
1.1
1.0
0.980
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
200
RF3S49092SM
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