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參數(shù)資料
| 型號： | F3S49092 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET |
| 中文描述： | 20A/10A，12V的，0.060/0.140歐姆，邏輯層次，互補功率MOSFET |
| 文件頁數(shù)： | 3/14頁 |
| 文件大小： | 395K |
| 代理商： | F3S49092 |
2004 Fairchild Semiconductor Corporation
RF3S49092SM Rev. C
Electrical Specifications (P-Channel)
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V, (Figure 34)
-12
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A, (Figure 33)
-1
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -12V,
V
GS
= 0V
T
C
= 25
o
C
T
C
= 150
o
C
-
-
-1
μ
A
-
-
-50
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
10V
-
-
±
100
nA
Drain to Source On Resistance
r
DS(ON)
I
D
= 10A, V
GS
= -5V, (Figures 30, 32)
-
-
0.140
Turn-On Time
t
ON
V
DD
= -6V, I
D
≈
10A, R
L
= 0.62
,
V
GS
= -5V, R
GS
= 25
(Figure 31)
-
-
115
ns
Turn-On Delay Time
t
d(ON)
-
25
-
ns
Rise Time
t
r
-
65
-
ns
Turn-Off Delay Time
t
d(OFF)
-
40
-
ns
Fall Time
t
f
-
45
-
ns
Turn-Off Time
t
OFF
-
-
110
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to -10V
V
DD
= -9.6V,
I
D
= 10A,
R
L
= 1.0
(Figure 36)
-
19
24
nC
Gate Charge at -5V
Q
g(-5)
V
GS
= 0V to -5V
-
10
14
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to -1V
-
0.8
1.1
nC
Input Capacitance
C
ISS
V
DS
= -10V, V
GS
= 0V, f = 1MHz
(Figure 35)
-
775
-
pF
Output Capacitance
C
OSS
-
550
-
pF
Reverse Transfer Capacitance
C
RSS
-
150
-
pF
Thermal Resistance Junction to Case
R
θ
JC
-
-
3.00
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
-
-
62
o
C/W
P-Channel Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Voltage
V
SD
I
SD
= -10A
-
-
-1.5
V
Reverse Recovery Time
t
rr
I
SD
= -10A, dI
SD
/dt = -100A/
μ
s
-
-
100
ns
Typical Performance Curves (N-Channel)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
175
10
5
025
50
75
100
125
175
15
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
25
20
150
RF3S49092SM
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