參數(shù)資料
型號(hào): EDS6416CHTA-75-E
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 64M bits SDRAM (4M words x 16 bits)
中文描述: 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝: ROHS COMPLIANT, PLASTIC, TSOP2-54
文件頁(yè)數(shù): 22/49頁(yè)
文件大小: 716K
代理商: EDS6416CHTA-75-E
EDS6416AHBH, EDS6416CHBH
Data Sheet E0442E40 (Ver. 4.0)
22
A2
A1
A0
Addressing(decimal)
Sequential
0, 1, 2, 3, 4, 5, 6, 7,
1, 2, 3, 4, 5, 6, 7,
2, 3, 4, 5, 6, 7,
3, 4, 5, 6, 7,
4, 5, 6, 7,
5, 6, 7,
6, 7,
7,
0, 1, 2, 3, 4, 5, 6,
0
0
0
0
1
1
0
0
1
1
0
0
0
1
0
1
0
1
1
1
1
Interleave
0, 1, 2, 3, 4, 5, 6, 7,
1, 0, 3, 2, 5, 4, 7,
2, 3, 0, 1, 6, 7,
3, 2, 1, 0, 7,
4, 5, 6, 7,
5, 4, 7,
6, 7,
7,
6, 5, 4, 3, 2, 1, 0,
1
1
0
Starting Ad.
0,
0, 1,
0, 1, 2,
0, 1, 2, 3,
0, 1, 2, 3, 4,
0, 1, 2, 3, 4, 5,
6,
4, 5,
6, 5, 4,
0, 1, 2, 3,
6, 1, 0, 3, 2,
4, 5, 2, 3, 0, 1,
Burst length = 8
A1
A0
Addressing(decimal)
Sequential
0, 1, 2, 3,
1, 2, 3, 0,
2, 3, 0, 1,
3, 0, 1, 2,
0
0
1
1
0
1
0
1
Interleave
0, 1, 2, 3,
1, 0, 3, 2,
2, 3, 0, 1,
3, 2, 1, 0,
Starting Ad.
Burst length = 4
A0
Addressing(decimal)
Sequential
0, 1,
1, 0,
0
1
Interleave
0, 1,
1, 0,
Starting Ad.
Burst length = 2
Burst Sequence
Full page burst is available only for sequential addressing. The addressing sequence is started from the column
address that is asserted by read/write command. And the address is increased one by one.
It is back to the address 0 when the address reaches at the end of address 255. “Full page burst” stops the burst
read/write with burst stop command.
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