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參數資料
| 型號： | EDS6416CHTA-75-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 64M bits SDRAM (4M words x 16 bits) |
| 中文描述： | 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| 封裝： | ROHS COMPLIANT, PLASTIC, TSOP2-54 |
| 文件頁數： | 15/49頁 |
| 文件大?。?/td> | 716K |
| 代理商： | EDS6416CHTA-75-E |
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EDS6416AHBH, EDS6416CHBH
Function Truth Table
The following table shows the operations that are performed when each command is issued in each mode of the
SDRAM.
The following table assumes that CKE is high.
Data Sheet E0442E40 (Ver. 4.0)
15
Current state
/CS
/RAS
/CAS
/WE
Address
Command
Operation
Precharge
H
×
×
×
×
DESL
Enter IDLE after tRP
L
H
H
H
×
NOP
Enter IDLE after tRP
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL*
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL*
3
L
L
H
H
BA, RA
ACT
ILLEGAL*
3
L
L
H
L
BA, A10
PRE, PALL
NOP*
5
L
L
L
H
×
REF, SELF
ILLEGAL
L
L
L
L
MODE
MRS
ILLEGAL
Idle
H
×
×
×
×
DESL
NOP
L
H
H
H
×
NOP
NOP
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL*
4
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL*
4
L
L
H
H
BA, RA
ACT
Bank and row active
L
L
H
L
BA, A10
PRE, PALL
NOP
L
L
L
H
×
REF, SELF
Refresh
L
L
L
L
MODE
MRS
Mode register set*
8
Row active
H
×
×
×
×
DESL
NOP
L
H
H
H
×
NOP
NOP
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
Begin read*
6
L
H
L
L
BA, CA, A10
WRIT/WRITA
Begin write*
6
L
L
H
H
BA, RA
ACT
Other bank active
ILLEGAL on same bank*
2
Precharge*
7
L
L
H
L
BA, A10
PRE, PALL
L
L
L
H
×
REF, SELF
ILLEGAL
L
L
L
L
MODE
MRS
ILLEGAL
Read
H
×
×
×
×
DESL
Continue burst to end
L
H
H
H
×
NOP
Continue burst to end
L
H
H
L
×
BST
Burst stop
L
H
L
H
BA, CA, A10
READ/READA
Continue burst read to /CAS
latency and New read
L
H
L
L
BA, CA, A10
WRIT/WRITA
Term burst read/start write
L
L
H
H
BA, RA
ACT
Other bank active
ILLEGAL on same bank*
2
L
L
H
L
BA, A10
PRE, PALL
Term burst read and Precharge
L
L
L
H
×
REF, SELF
ILLEGAL
L
L
L
L
MODE
MRS
ILLEGAL
相關PDF資料 |
PDF描述 |
|---|---|
| EDS6416AHBH | 64M bits SDRAM (4M words x 16 bits) |
| EDS6416AHBH-6B-E | Circular Connector; No. of Contacts:39; Series:MS27468; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:21; Circular Contact Gender:Socket; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:21-39 RoHS Compliant: No |
| EDS6416AHBH-75-E | 64M bits SDRAM (4M words x 16 bits) |
| EDS6432AFTA-75TI-E | 64M bits SDRAM WTR (Wide Temperature Range) |
| EDX5116ABSE-3B-E | 512M bits XDR DRAM (32M words ?16 bits) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| EDS6416GHTA | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:64M bits SDRAM |
| EDS6416GHTA-10-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:64M bits SDRAM |
| EDS6432AFBH | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:64M bits SDRAM (2M words x 32 bits) |
| EDS6432AFBH-6B-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:64M bits SDRAM (2M words x 32 bits) |
| EDS6432AFBH-75-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:64M bits SDRAM (2M words x 32 bits) |
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