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| 型號： | EDS5104ABTA |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | 512M bits SDRAM |
| 中文描述： | 512M比特內(nèi)存 |
| 文件頁數(shù)： | 5/52頁 |
| 文件大?。?/td> | 564K |
| 代理商： | EDS5104ABTA |
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EDS5104ABTA, EDS5108ABTA, EDS5116ABTA
Preliminary Data Sheet E0250E10 (Ver. 1.0)
5
DC Characteristics 1 (TA = 0 to +70
°
C, VDD, VDDQ = 3.3V ± 0.3V, VSS, VSSQ = 0V)
Parameter
max.
/CAS latency
Symbol
Grade
×
4
×
8
×
16
Unit
Test condition
Notes
Operating current
ICC1
-6B,-7A
-75
160
140
165
145
175
155
mA
Burst length = 1
tRC = tRC (min.)
CKE = VIL,
tCK = tCK (min.)
1, 2, 3
Standby current in power
down
Standby current in power
down (input signal stable)
Standby current in non
power down
Standby current in non
power down (input signal
stable)
Active standby current in
power down
Active standby current in
power down (input signal
stable)
Active standby current in
non power down
Active standby current in
non power down (input
signal stable)
ICC2P
3
3
3
mA
6
ICC2PS
2
2
2
mA
CKE = VIL, tCK =
∞
7
ICC2N
-6B
-7A, -75
30
25
30
25
30
25
mA
CKE, /CS = VIH,
tCK = tCK (min.)
4
ICC2NS
9
9
9
mA
CKE = VIH, tCK =
∞
,
/CS = VIH
8
ICC3P
4
4
4
mA
CKE = VIL,
tCK = tCK (min.)
1, 2, 6
ICC3PS
3
3
3
mA
CKE = VIL, tCK =
∞
2, 7
ICC3N
-6B
-7A, -75
45
40
45
40
45
40
mA
CKE, /CS = VIH,
tCK = tCK (min.)
1, 2, 4
ICC3NS
20
20
20
mA
CKE = VIH, tCK =
∞
,
/CS = VIH
2, 8
Burst operating current
ICC4
-6B
-7A, -75
-6B,-7A
-75
160
130
320
280
170
140
320
280
190
160
320
280
mA
tCK = tCK (min.), BL = 4 1, 2, 5
Refresh current
ICC5
mA
tRC = tRC (min.)
3
Self refresh current
ICC6
4
4
4
mA
VIH
≥
VDD
– 0.2V
VIL
≤
0.2V
Notes: 1. ICC depends on output load condition when the device is selected. ICC (max.) is specified at the output
open condition.
2. One bank operation.
3. Input signals are changed once per one clock.
4. Input signals are changed once per two clocks.
5. Input signals are changed once per four clocks.
6. After power down mode, CLK operating current.
7. After power down mode, no CLK operating current.
8. Input signals are VIH or VIL fixed.
DC Characteristics 2 (TA = 0 to +70
°
C, VDD, VDDQ = 3.3V ± 0.3V, VSS, VSSQ = 0V)
Parameter
Symbol
min.
max.
Unit
Test condition
Notes
Input leakage current
ILI
–1
1
μA
0
≤
VIN
≤
VDD
Output leakage current
ILO
–1.5
1.5
μA
0
≤
VOUT
≤
VDD, DQ = disable
Output high voltage
VOH
2.4
—
V
IOH = –4 mA
Output low voltage
VOL
—
0.4
V
IOL = 4 mA
相關PDF資料 |
PDF描述 |
|---|---|
| EDS5116ABTA | 512M bits SDRAM |
| EDS5116ABTA-6B | 512M bits SDRAM |
| EDS5116ABTA-75 | 512M bits SDRAM |
| EDS5116ABTA-7A | 512M bits SDRAM |
| EDS5104ABTA-6B | RP15 (F) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 12V; 2:1 Wide Input Voltage Range; 15 Watts Output Power; 1.6kVDC Isolation; UL Certified; Fixed Operating Frequency; Six-Sided Continuous Shield; Standard 50.8 x25.4x10.2mm Package; Efficiency to 88% |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| EDS5104ABTA-6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits SDRAM |
| EDS5104ABTA-75 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits SDRAM |
| EDS5104ABTA-7A | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits SDRAM |
| EDS5108ABTA | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits SDRAM |
| EDS5108ABTA-6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits SDRAM |
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