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參數(shù)資料
| 型號： | EDS5104ABTA |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | 512M bits SDRAM |
| 中文描述： | 512M比特內(nèi)存 |
| 文件頁數(shù)： | 27/52頁 |
| 文件大?。?/td> | 564K |
| 代理商： | EDS5104ABTA |
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EDS5104ABTA, EDS5108ABTA, EDS5116ABTA
Preliminary Data Sheet E0250E10 (Ver. 1.0)
27
Operation of the SDRAM
Read/Write Operations
Bank active
Before executing a read or write operation, the corresponding bank and the row address must be activated by the
bank active (ACT) command. An interval of tRCD is required between the bank active command input and the
following read/write command input.
Read operation
A read operation starts when a read command is input. Output buffer becomes Low-Z in the (/CAS Latency - 1)
cycle after read command set. The SDRAM can perform a burst read operation.
The burst length can be set to 1, 2, 4 and 8. The start address for a burst read is specified by the column address
and the bank select address at the read command set cycle. In a read operation, data output starts after the number
of clocks specified by the /CAS Latency. The /CAS Latency can be set to 2 or 3.
When the burst length is 1, 2, 4 and 8 the DOUT buffer automatically becomes High-Z at the next clock after the
successive burst-length data has been output.
The /CAS latency and burst length must be specified at the mode register.
READ
CLK
Command
DQ
ACT
Row
Column
Address
CL = 2
CL = 3
out 0
out 1
out 2
out 3
out 0
out 1
out 2
out 3
tRCD
CL = /CAS latency
Burst Length = 4
/CAS Latency
READ
CLK
Command
DQ
ACT
Row
Column
out 0
out 6
out 7
Address
out 0 out 1
out 4
out 5
out 0
out 1 out 2 out 3
BL = 1
out 0 out 1 out 2
out 3
BL = 2
BL = 4
BL = 8
tRCD
BL : Burst Length
/CAS Latency = 2
Burst Length
相關PDF資料 |
PDF描述 |
|---|---|
| EDS5116ABTA | 512M bits SDRAM |
| EDS5116ABTA-6B | 512M bits SDRAM |
| EDS5116ABTA-75 | 512M bits SDRAM |
| EDS5116ABTA-7A | 512M bits SDRAM |
| EDS5104ABTA-6B | RP15 (F) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 12V; 2:1 Wide Input Voltage Range; 15 Watts Output Power; 1.6kVDC Isolation; UL Certified; Fixed Operating Frequency; Six-Sided Continuous Shield; Standard 50.8 x25.4x10.2mm Package; Efficiency to 88% |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| EDS5104ABTA-6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits SDRAM |
| EDS5104ABTA-75 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits SDRAM |
| EDS5104ABTA-7A | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits SDRAM |
| EDS5108ABTA | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits SDRAM |
| EDS5108ABTA-6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits SDRAM |
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