參數(shù)資料
型號: EDS2516AFTA
廠商: Elpida Memory, Inc.
英文描述: 256M bits SDRAM
中文描述: 256M比特內(nèi)存
文件頁數(shù): 9/50頁
文件大?。?/td> 603K
代理商: EDS2516AFTA
EDS2516AFTA
Data Sheet E0984E20 (Ver. 2.0)
9
Relationship Between Frequency and Minimum Latency
-6B
-75
Frequency (MHz)
166
100
133
100
tCK (ns)
Symbol
6
10
7.5
10
Unit
Notes
Active command to column command
(same bank)
Active command to active command
(same bank)
Active command to precharge
command
(same bank)
Precharge command to active
command
(same bank)
Write recovery or data-in to precharge
command
(same bank)
Active command to active command
(different bank)
l
RCD
3
2
3
2
tCK
1
l
RC
10
7
9
7
tCK
1
l
RAS
7
5
6
5
tCK
1
l
RP
3
2
3
2
tCK
1
l
DPL
2
2
2
2
tCK
1
l
RRD
2
2
2
2
tCK
1
Self refresh exit time
l
SREX
1
1
1
1
tCK
2
Last data in to active command
(Auto precharge, same bank)
l
DAL
5
4
5
4
tCK
Self refresh exit to command input
l
SEC
10
7
9
7
tCK
= [
l
RC]
3
Precharge command to high
impedance
(CL = 2)
l
HZP
2
2
tCK
(CL = 3)
l
HZP
3
3
3
3
tCK
Last data out to active command
(Auto precharge, same bank)
Last data out to precharge
(early precharge)
(CL = 2)
l
APR
1
1
1
1
tCK
l
EP
–1
–1
tCK
(CL = 3)
l
EP
–2
–2
–2
–2
tCK
Column command to column
command
l
CCD
1
1
1
1
tCK
Write command to data in latency
l
WCD
0
0
0
0
tCK
DQM to data in
l
DID
0
0
0
0
tCK
DQM to data out
l
DOD
2
2
2
2
tCK
CKE to CLK disable
l
CLE
1
1
1
1
tCK
Register set to active command
l
MRD
2
2
2
2
tCK
/CS to command disable
l
CDD
0
0
0
0
tCK
Power down exit to command input
l
PEC
1
1
1
1
tCK
Notes: 1.
l
RCD to
l
RRD are recommended value.
2. Be valid [DESL] or [NOP] at next command of self refresh exit.
3. Except [DESL] and [NOP]
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