參數(shù)資料
型號: EDS2516AFTA
廠商: Elpida Memory, Inc.
英文描述: 256M bits SDRAM
中文描述: 256M比特內(nèi)存
文件頁數(shù): 24/50頁
文件大小: 603K
代理商: EDS2516AFTA
EDS2516AFTA
Data Sheet E0984E20 (Ver. 2.0)
24
Power-up sequence
Power-up sequence
1. Apply VDD and VDDQ at the same time. Keep CKE low during power up.
2. Wait for stable power.
3. Start clock and drive CKE high.
Note: Voltage on any input pin must not exceed VDD + 0.3V during power up.
Initialization sequence
4. After stable power and stable clock, wait 200
μ
s.
5. Issue precharge all command (PALL).
6. After tRP delay, issue 8 or more auto refresh commands (REF).
7. Set the mode register set command (MRS) to initialize the mode register.
Note: We recommend that you keep DQM and CKE high during initialization sequence to prevent data contention
on the DQ bus.
Power up sequence
Initialization sequence
VDD, VDDQ
CKE
CLK
Command
PALL
REF
REF
MRS
CMD
0V
Low
Power stable
Clock stable
Power-up and Initialization sequence
l
RP
l
RC
l
RC
l
MRD
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