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參數(shù)資料
| 型號： | EDS1232CABB |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | 128M bits SDRAM |
| 中文描述： | 128兆位內(nèi)存 |
| 文件頁數(shù)： | 38/55頁 |
| 文件大?。?/td> | 564K |
| 代理商： | EDS1232CABB |
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EDS1232CABB, EDS1232CATA
Preliminary Data Sheet E0247E40 (Ver. 4.0)
38
Read with auto precharge to Write command interval
1. Different bank: When some banks are in the active state, the second write command (another bank) is executed.
However, DQM must be set High so that the output buffer becomes High-Z before data input. The internal auto-
precharge of one bank starts at the next clock of the second command.
CLK
Command
BS
DQ (output)
DQ (input)
CL = 2
CL = 3
READA
WRIT
in B0
in B1
in B2
in B3
BL = 4
bank0
ReadA
bank3
Write
Note: Internal auto-precharge starts at the timing indicated by " ".
DQM
High-Z
Read with Auto Precharge to Write Command Interval (Different bank)
2. Same bank: The consecutive write command from read with auto precharge (the same bank) is illegal. It is
necessary to separate the two commands with a bank active command.
Write with auto precharge to Read command interval
1. Different bank: When some banks are in the active state, the second read command (another bank) is executed.
However, in case of a burst write, data will continue to be written until one clock before the read command is
executed. The internal auto-precharge of one bank starts at 2 clocks later from the second command.
CLK
Command
BS
DQ (output)
DQ (input)
WRITA
READ
out B0
out B1
out B2
out B3
CL = 3
BL = 4
bank0
WriteA
bank3
Read
Note: Internal auto-precharge starts at the timing indicated by " ".
DQM
in A0
Write with Auto Precharge to Read Command Interval (Different bank)
2. Same bank: The consecutive read command from write with auto precharge (the same bank) is illegal. It is
necessary to separate the two commands with a bank active command.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EDS1232CASE-1A-E | ER 8C 7#16 1#12 PIN RECP LINE |
| EDS1232CASE-1AL-E | 128M bits SDRAM (4M words x 32 bits) |
| EDS1232AASE-60-E | 128M bits SDRAM (4M words x 32 bits) |
| EDS1232AASE-60L-E | Circular Connector; No. of Contacts:6; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:20; Circular Contact Gender:Socket; Circular Shell Style:Cable Receptacle; Insert Arrangement:20-17 RoHS Compliant: No |
| EDS1232AASE-75-E | ER 6C 3#16 3#8 SKT RECP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EDS1232CABB-1A-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits SDRAM |
| EDS1232CABB-1AL-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits SDRAM |
| EDS1232CABB-75-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits SDRAM |
| EDS1232CABB-75L-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits SDRAM |
| EDS1232CASE | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits SDRAM (4M words x 32 bits) |
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