參數(shù)資料
型號(hào)： EDS1232CABB
廠商： Elpida Memory, Inc.
英文描述： 128M bits SDRAM
中文描述： 128兆位內(nèi)存
文件頁(yè)數(shù)： 28/55頁(yè)
文件大?。?/td> 564K
代理商： EDS1232CABB
EDS1232CABB, EDS1232CATA
Preliminary Data Sheet E0247E40 (Ver. 4.0)
28
Operation of the SDRAM
Read/Write Operations
Bank active
Before executing a read or write operation, the corresponding bank and the row address must be activated by the
bank active (ACT) command. An interval of tRCD is required between the bank active command input and the
following read/write command input.
Read operation
A read operation starts when a read command is input. Output buffer becomes Low-Z in the (/CAS Latency - 1)
cycle after read command set. The SDRAM can perform a burst read operation.
The burst length can be set to 1, 2, 4 and 8. The start address for a burst read is specified by the column address
and the bank select address at the read command set cycle. In a read operation, data output starts after the number
of clocks specified by the /CAS Latency. The /CAS Latency can be set to 2 or 3.
When the burst length is 1, 2, 4 and 8 the DOUT buffer automatically becomes High-Z at the next clock after the
successive burst-length data has been output.
The /CAS latency and burst length must be specified at the mode register.
READ
CLK
Command
DQ
ACT
Row
Column
Address
CL = 2
CL = 3
out 0
out 1
out 2
out 3
out 0
out 1
out 2
out 3
tRCD
CL = /CAS latency
Burst Length = 4
/CAS Latency
READ
CLK
Command
DQ
ACT
Row
Column
out 0
out 6
out 7
Address
out 0 out 1
out 4
out 5
out 0
out 1 out 2 out 3
BL = 1
out 0 out 1 out 2
out 3
BL = 2
BL = 4
BL = 8
tRCD
BL : Burst Length
/CAS Latency = 2
Burst Length
相關(guān)PDF資料
PDF描述
EDS1232CASE-1A-E ER 8C 7#16 1#12 PIN RECP LINE
EDS1232CASE-1AL-E 128M bits SDRAM (4M words x 32 bits)
EDS1232AASE-60-E 128M bits SDRAM (4M words x 32 bits)
EDS1232AASE-60L-E Circular Connector; No. of Contacts:6; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:20; Circular Contact Gender:Socket; Circular Shell Style:Cable Receptacle; Insert Arrangement:20-17 RoHS Compliant: No
EDS1232AASE-75-E ER 6C 3#16 3#8 SKT RECP
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDS1232CABB-1A-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits SDRAM
EDS1232CABB-1AL-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits SDRAM
EDS1232CABB-75-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits SDRAM
EDS1232CABB-75L-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits SDRAM
EDS1232CASE 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits SDRAM (4M words x 32 bits)
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