參數(shù)資料
型號(hào): EDS1232CABB
廠商: Elpida Memory, Inc.
英文描述: 128M bits SDRAM
中文描述: 128兆位內(nèi)存
文件頁(yè)數(shù): 15/55頁(yè)
文件大小: 564K
代理商: EDS1232CABB
EDS1232CABB, EDS1232CATA
Preliminary Data Sheet E0247E40 (Ver. 4.0)
15
Self refresh entry command (/CS, /RAS, /CAS, CKE = Low, /WE = High)
After the command execution, self refresh operation continues while CKE remains low. When CKE goes high, the
Synchronous DRAM exits the self refresh mode. During self refresh mode, refresh interval and refresh operation are
performed internally, so there is no need for external control. Before executing self refresh, all banks must be
precharged.
/WE
/CAS
/RAS
/CS
CKE
CLK
Add
A10
BA0, BA1
(Bank select)
Self Refresh Entry Command
Burst stop command (/CS = /WE = Low, /RAS, /CAS = High)
This command can stop the current burst operation.
/WE
/CAS
/RAS
/CS
CKE
CLK
Add
A10
(Bank select)
H
Burst Stop Command in Full Page Mode
No operation (/CS = Low, /RAS, /CAS, /WE = High)
This command is not an execution command. No operations begin or terminate by this command.
/WE
/CAS
/RAS
/CS
CKE
CLK
H
Add
No Operation
A10
(Bank select)
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