- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384281 > EDS1232AATA-75L-E (ELPIDA MEMORY INC) 128M bits SDRAM (4M words x 32 bits) PDF資料下載
參數(shù)資料
| 型號： | EDS1232AATA-75L-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 128M bits SDRAM (4M words x 32 bits) |
| 中文描述： | 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86 |
| 封裝： | ROHS COMPLIANT, PLASTIC, TSOP2-86 |
| 文件頁數(shù)： | 38/55頁 |
| 文件大?。?/td> | 564K |
| 代理商： | EDS1232AATA-75L-E |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁當前第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁
EDS1232CABB, EDS1232CATA
Preliminary Data Sheet E0247E40 (Ver. 4.0)
38
Read with auto precharge to Write command interval
1. Different bank: When some banks are in the active state, the second write command (another bank) is executed.
However, DQM must be set High so that the output buffer becomes High-Z before data input. The internal auto-
precharge of one bank starts at the next clock of the second command.
CLK
Command
BS
DQ (output)
DQ (input)
CL = 2
CL = 3
READA
WRIT
in B0
in B1
in B2
in B3
BL = 4
bank0
ReadA
bank3
Write
Note: Internal auto-precharge starts at the timing indicated by " ".
DQM
High-Z
Read with Auto Precharge to Write Command Interval (Different bank)
2. Same bank: The consecutive write command from read with auto precharge (the same bank) is illegal. It is
necessary to separate the two commands with a bank active command.
Write with auto precharge to Read command interval
1. Different bank: When some banks are in the active state, the second read command (another bank) is executed.
However, in case of a burst write, data will continue to be written until one clock before the read command is
executed. The internal auto-precharge of one bank starts at 2 clocks later from the second command.
CLK
Command
BS
DQ (output)
DQ (input)
WRITA
READ
out B0
out B1
out B2
out B3
CL = 3
BL = 4
bank0
WriteA
bank3
Read
Note: Internal auto-precharge starts at the timing indicated by " ".
DQM
in A0
Write with Auto Precharge to Read Command Interval (Different bank)
2. Same bank: The consecutive read command from write with auto precharge (the same bank) is illegal. It is
necessary to separate the two commands with a bank active command.
相關PDF資料 |
PDF描述 |
|---|---|
| EDS1232AABB-60-E | 128M bits SDRAM |
| EDS1232CASE | 128M bits SDRAM (4M words x 32 bits) |
| EDS1232AABB | 128M bits SDRAM |
| EDS1232AABB-60L-E | 128M bits SDRAM |
| EDS1232AABB-75-E | 128M bits SDRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| EDS1232AATA-75MI | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits SDRAM WTR (Wide Temperature Range) |
| EDS1232AATA-75TI | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits SDRAM WTR (Wide Temperature Range) |
| EDS1232AATA-MI | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits SDRAM WTR (Wide Temperature Range) |
| EDS1232AATA-TI | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits SDRAM WTR (Wide Temperature Range) |
| EDS1232AHTA | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits SDRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。