參數(shù)資料
型號: EDS1232AASE-75-E
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: ER 6C 3#16 3#8 SKT RECP
中文描述: 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
封裝: ROHS COMPLIANT, FBGA-90
文件頁數(shù): 25/55頁
文件大小: 564K
代理商: EDS1232AASE-75-E
EDS1232CABB, EDS1232CATA
Preliminary Data Sheet E0247E40 (Ver. 4.0)
25
Burst Length and Sequence
[Burst of Two]
Starting address
(column address A0, binary)
Sequential addressing sequence
(decimal)
Interleave addressing sequence
(decimal)
0
0, 1
0, 1
1
1, 0
1, 0
[Burst of Four]
Starting address
(column address A1 to A0, binary)
Sequential addressing sequence
(decimal)
Interleave addressing sequence
(decimal)
00
0, 1, 2, 3
0, 1, 2, 3
01
1, 2, 3, 0
1, 0, 3, 2
10
2, 3, 0, 1
2, 3, 0, 1
11
3, 0, 1, 2
3, 2, 1, 0
[Burst of Eight]
Starting address
(column address A2 to A0, binary)
Sequential addressing sequence
(decimal)
Interleave addressing sequence
(decimal)
000
0, 1, 2, 3, 4, 5, 6, 7
0, 1, 2, 3, 4, 5, 6, 7
001
1, 2, 3, 4, 5, 6, 7, 0
1, 0, 3, 2, 5, 4, 7, 6
010
2, 3, 4, 5, 6, 7, 0, 1
2, 3, 0, 1, 6, 7, 4, 5
011
3, 4, 5, 6, 7, 0, 1, 2
3, 2, 1, 0, 7, 6, 5, 4
100
4, 5, 6, 7, 0, 1, 2, 3
4, 5, 6, 7, 0, 1, 2, 3
101
5, 6, 7, 0, 1, 2, 3, 4
5, 4, 7, 6, 1, 0, 3, 2
110
6, 7, 0, 1, 2, 3, 4, 5
6, 7, 4, 5, 2, 3, 0, 1
111
7, 0, 1, 2, 3, 4, 5, 6
7, 6, 5, 4, 3, 2, 1, 0
Full page burst is an extension of the above tables of sequential addressing, with the length being 256.
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