參數(shù)資料
型號: EDI88130LPS17CM
廠商: WHITE ELECTRONIC DESIGNS CORP
元件分類: SRAM
英文描述: 128K X 8 STANDARD SRAM, 17 ns, CDIP32
封裝: 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
文件頁數(shù): 2/9頁
文件大?。?/td> 499K
代理商: EDI88130LPS17CM
2
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
EDI88130CS
March 2002
Rev. 11
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to V
SS
Operating Temperature T
A
(Ambient)
Industrial
Military
Storage Temperature, Ceramic
Power Dissipation
Output Current
Junction Temperature, T
J
NOTE:
Stress greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions greater than those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
Unit
V
-0.2 to 7.0
-40 to +85
-55 to +125
-65 to +150
1.7
40
175
°C
°C
°C
W
mA
°C
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Supply Voltage
V
CC
Supply Voltage
V
SS
Input High Voltage
V
IH
Input Low Voltage
V
IL
-0.5
Typ
5.0
0
Max
5.5
0
Unit
V
V
V
V
4.5
0
2.2
V
CC
+0.5
+0.8
TRUTH TABLE
WE#
Mode
X
Standby
X
Standby
H
Output Deselect
H
Read
L
OE#
X
X
H
L
X
CS1#
H
X
L
L
L
CS2
X
L
H
H
H
Output
High Z
High Z
High Z
Data Out
Data In
Power
Icc2, Icc3
Icc2, Icc3
Icc1
Icc1
Icc1
Write
CAPACITANCE
T
A
= +25°C
Parameter
Symbol
Condition
Max
CSOJ,DIP,
Flatpack
12
Unit
LCC
6
Address Lines
C
I
V
IN
= Vcc or Vss,
f = 1.0MHz
V
OUT
= Vcc or Vss,
f = 1.0MHz
pF
Data Lines
C
O
8
14
pF
These parameters are sampled, not 100% tested.
30pF
480
Vcc
Q
Figure 1
Figure 2
255
5pF
480
Vcc
Q
255
AC Test Conditions
DC CHARACTERISTICS
V
CC
= 5.0V, -55°C ≤ T
A
≤ +125°C
Conditions
V
IN
= 0V to V
CC
V
I/O
= 0V to V
CC
Parameter
Input Leakage Current
Output Leakage Current
Symbol
I
LI
I
LO
Min
2.4
Typ
Max
±5
±10
300
225
200
25
60
10
15
5
0.4
Units
μA
μA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
Operating Power Supply Current
Icc1
WE#, CS1# = V
IL
, I
I/O
= 0mA, CS2 = V
IH
(15-17ns)
(20ns)
(25-55ns)
(17-55ns)
(15ns)
CS (17-55ns)
CS (15ns)
Standby (TTL) Power Supply Current
Icc2
CS1# ≥ V
IH
and/or CS2 ≤ V
IL
,
V
IN
≥ V
IH
or ≤ V
IL
Full Standby Power Supply Current
Icc3
CS1# ≥ V
CC
-0.2V and/or CS2 ≤ 0.2V
3
V
IN
≥ V
CC
-0.2V or V
IN
≤ 0.2V
I
OL
= 8.0mA
I
OH
= -4.0mA
LPS
Output Low Voltage
Output High Voltage
V
OL
V
OH
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load
NOTE: For t
EHQZ
, t
GHQZ
and t
WLQZ
, CL = 5pF Figure 2
V
SS
to 3.0V
5ns
1.5V
Figure 1
相關(guān)PDF資料
PDF描述
EDI88130LPS35CC 128K X 8 STANDARD SRAM, 35 ns, CDIP32
EDI88257LPA45CI 256K X 8 STANDARD SRAM, 45 ns, CDIP32
EDI88257LPA55CM 256K X 8 STANDARD SRAM, 55 ns, CDIP32
EDI8C32128LP35JM 512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, CQCC68
EDI8F1664CA30M6C 128K X 8 MULTI DEVICE SRAM MODULE, 30 ns, DMA40
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDI88130LPS20CB 制造商:Microsemi Corporation 功能描述:128K X 8 SRAM MONOLITHIC, DUAL CHIP SELECT, 5V, LOW POWER, 2 - Bulk
EDI88130LPS20CI 制造商:Microsemi Corporation 功能描述:128K X 8 SRAM MONOLITHIC, DUAL CHIP SELECT, 5V, LOW POWER, 2 - Bulk
EDI88130LPS20FB 制造商:Microsemi Corporation 功能描述:128K X 8 SRAM MONOLITHIC, DUAL CHIP SELECT, 5V, LOW POWER, 2 - Bulk
EDI88130LPS20LB 制造商:Microsemi Corporation 功能描述:128K X 8 SRAM MONOLITHIC, DUAL CHIP SELECT, 5V, LOW POWER, 2 - Bulk
EDI88130LPS20LI 制造商:Microsemi Corporation 功能描述:128K X 8 SRAM MONOLITHIC, DUAL CHIP SELECT, 5V, LOW POWER, 2 - Bulk