參數(shù)資料
型號： EDE5108AJBG
廠商： Elpida Memory, Inc.
英文描述： 512M bits DDR2 SDRAM
中文描述： 512M比特DDR2 SDRAM內(nèi)存
文件頁數(shù)： 11/77頁
文件大小： 589K
代理商： EDE5108AJBG
EDE5108AJBG, EDE5116AJBG
Preliminary Data Sheet E1044E20 (Ver. 2.0)
11
ODT DC Electrical Characteristics (TC = 0
°
C to +85
°
C, VDD, VDDQ = 1.8V
±
0.1V)
Parameter
Symbol
min
typ
max
Unit
Note
Rtt effective impedance value for EMRS (A6, A2)
=
0, 1
;
75
Ω
Rtt1 (eff)
60
75
90
Ω
1
Rtt effective impedance value for EMRS (A6, A2)
=
1, 0
;
150
Ω
Rtt2 (eff)
120
150
180
Ω
1
Rtt effective impedance value for EMRS (A6, A2)
=
1, 1
;
50
Ω
Rtt3 (eff)
40
50
60
Ω
1
Deviation of VM with respect to VDDQ/2
Δ
VM
6
+
6
%
1
Note: 1. Test condition for Rtt measurements.
Measurement Definition for Rtt (eff)
Apply VIH (AC) and VIL (AC) to test pin separately, then measure current I(VIH (AC)) and I(VIL (AC)) respectively.
VIH (AC), and VDDQ values defined in SSTL
_
18.
))
(
(
))
(
(
)
(
)
(
AC
)
(
AC
VIL
I
VIH
I
AC
VIL
AC
VIH
eff
Rtt
=
Measurement Definition for
Δ
VM
Measure voltage (VM) at test pin (midpoint) with no load.
100
1
2
VDDQ
×
×
=
Δ
VM
VM
OCD Default Characteristics (TC = 0
°
C to +85
°
C, VDD, VDDQ = 1.8V
±
0.1V)
Parameter
min
typ
max
Unit
Notes
Output impedance
12.6
18
23.4
Ω
1, 5
Pull-up and pull-down mismatch
0
4
Ω
1, 2
Output slew rate
1.5
5
V/ns
3, 4
Notes: 1. Impedance measurement condition for output source DC current: VDDQ = 1.7V; VOUT = 1420mV;
(VOUT
VDDQ)/IOH must be less than 23.4
Ω
for values of VOUT between VDDQ and VDDQ
280mV.
Impedance measurement condition for output sink DC current: VDDQ = 1.7V; VOUT = 280mV;
VOUT/IOL must be less than 23.4
Ω
for values of VOUT between 0V and 280mV.
2. Mismatch is absolute value between pull up and pull down, both are measured at same temperature and
voltage.
3. Slew rate measured from VIL (AC) to VIH (AC).
4. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate
as measured from AC to AC. This is guaranteed by design and characterization.
5. DRAM I/O specifications for timing, voltage, and slew rate are no longer applicable if OCD is changed
from default settings.
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EDE5108AJBG-6E-E 512M bits DDR2 SDRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDE5108AJBG-1J 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM
EDE5108AJBG-1J-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM
EDE5108AJBG-6E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM
EDE5108AJBG-8E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM
EDE5108AJSE 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM
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