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參數(shù)資料
| 型號(hào)： | DS_K7B803625B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM |
| 中文描述： | 256Kx36 |
| 文件頁(yè)數(shù)： | 1/19頁(yè) |
| 文件大?。?/td> | 439K |
| 代理商： | DS_K7B803625B |
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K7B801825B
256Kx36 & 512Kx18 Synchronous SRAM
- 1 -
Rev 3.0
Nov. 2003
K7B803625B
Document Title
256Kx36 & 512Kx18-Bit Synchronous Burst SRAM
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Revision History
Rev. No.
0.0
0.1
0.2
1.0
2.0
2.1
3.0
Remark
Preliminary
Preliminary
Preliminary
Final
Final
Final
Final
History
Initial draft
Add x32 org part and industrial temperature part
1. change scan order(1) form 4T to 6T at 119BGA(x18)
1. Final spec release
2. Change I
SB2
form 50mA to 60mA
Change ordering information( remove 225MHz at SPB)
1. Delete 119BGA package
1. Remove x32 organization
2. Remove -85 speed bin
Draft Date
May. 18 . 2001
Aug. 11. 2001
Aug. 28. 2001
Nov. 16. 2001
April. 01. 2002
April. 04. 2003
Nov. 17. 2003
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