參數(shù)資料
型號： DS_K7N323601M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 1Mx36 & 2Mx18-Bit Pipelined NtRAM
中文描述： 1Mx36
文件頁數(shù)： 1/24頁
文件大?。?/td> 277K
代理商： DS_K7N323601M
1Mx36 & 2Mx18 Pipelined N
t
RAM
TM
- 1 -
Rev 2.0
Nov. 2003
K7N321801M
K7N323601M
Document Title
1Mx36 & 2Mx18-Bit Pipelined N
t
RAM
TM
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Revision History
Rev. No.
0.0
0.1
0.2
0.3
0.4
0.5
1.0
1.1
2.0
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Final
Final
Final
History
1. Initial document.
1. Add 165FBGA package
1. Update JTAG scan order
2. Speed bin merge.
From K7N3236(18)09M to K7N3236(18)01M
3. AC parameter change.
tOH(min)/tLZC(min) from 0.8 to 1.5 at -25
tOH(min)/tLZC(min) from 1.0 to 1.5 at -22
tOH(min)/tLZC(min) from 1.0 to 1.5 at -20
1. Change pin out for 165FBGA
- x18/x36 ; 11B => from A to NC , 2R ==> from NC to A
1. Insert pin at JTAG scan order of 165FBGA in connection with
pin out change
- x18/x36 ; insert Pin ID of 2R to BIT number of 69
1. Add Icc, Isb, Isb1 and Isb2 values.
1. Final datasheet release.
1. Change the Stand-by current (Isb)
Before After
Isb - 25 : 120 170
- 22 : 110 160
- 20 : 100 150
- 16 : 90 140
- 15 : 90 140
- 13 : 90 140
Isb1 : 90 110
Isb2 : 80 100
1. Delete the 119BGA package
2. Delete the 225MHz and 150MHz speed bin
Draft Date
May. 10. 2001
Aug. 29. 2001
Dec. 31. 2001
Feb. 14. 2002
Apr. 20. 2002
May. 10. 2002
Sep. 26. 2002
Oct. 17, 2003
Nov. 18, 2003
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