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參數(shù)資料
| 型號： | DS_K6X8016C3B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM |
| 中文描述： | 64Kx36 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 130K |
| 代理商： | DS_K6X8016C3B |
K6X8016C3B Family
Revision 1.0
September 2003
1
CMOS SRAM
Document Title
512Kx16 bit Low Power Full CMOS Static RAM
Revision History
Revision No.
0.0
0.1
0.11
1.0
Remark
Preliminary
Preliminary
Preliminary
Final
History
Initial draft
Revised
- Deleted 44-TSOP2-400R package type.
- Added Commercial product.
Revised
- Errata correction : corrected commercial product family name from
K6X8016C3B-F to K6X8016C3B-B in PRODUCT FAMILY.
Finalized
- Changed I
CC
from 12mA to 6mA
- Changed I
CC
1 from 12mA to 7mA
- Changed I
CC
2 from 60mA to 35mA
- Changed I
SB
from 3mA to 0.4mA
- Changed I
SB
1
(Commercial)
from 40
μ
A to 25
μ
A
- Changed I
SB
1
(industrial)
from 40
μ
A to 25
μ
A
- Changed I
SB
1
(Automotive)
from 50
μ
A to 40
μ
A
- Changed I
DR
(Commercial)
from 30
μ
A to 15
μ
A
- Changed I
DR
(industrial)
from 30
μ
A to 15
μ
A
- Changed I
DR
(Automotive)
from 40
μ
A to 30
μ
A
Draft Date
October 31, 2002
December 11, 2002
March 26, 2003
September 16, 2003
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices.
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