參數(shù)資料
型號(hào)： CXK79M72C161GB
英文描述： MEMORY-SigmaRAM 16Meg 1x1 LVCMOS I/O (256K x 72) (27 pages 364K Rev. 7/6/01)
中文描述： 內(nèi)存SigmaRAM 16Meg 1x1的LVCMOS的I / O（256 × 72）（27頁(yè)364K牧師7/6/01）
文件頁(yè)數(shù)： 18/30頁(yè)
文件大小： 554K
代理商： CXK79M72C161GB
SONY
Σ
RAM CXK79M72C160GB / CXK79M36C160GB / CXK79M18C160GB
Preliminary
18Mb 1x1Lp, HSTL, rev 1.0
18 / 30
July 19, 2002
Two Bank Read-Write-Read Timing Diagram
Note
:
In the diagram above, two Deselect operations are inserted between Read and Write operations to control the data bus transition
from output to input. This depiction is for clarity purposes only. It is NOT a requirement. Depending on the application, one Deselect op-
eration may be sufficient.
Note
: Bank 1 EP1 = “l(fā)ow”, Bank 2 EP1 “high”, and Bank 1 and Bank 2 E2 = EP2 in this example (not shown).
A2
A3
A4
A5
A
E1
DQ (B1)
Q11
D41
Q12
A1
B-Deselect
R-Continue
B-Deselect
Read
B-Deselect
Deselect
Write
B-Deselect
W-Continue B-Deselect
Read
Deselect
B-Deselect
Deselect
Figure 4
CK
CQ (B1)
CQ (B1)
ADV
W
Bx
E2
B1:
B2:
Read
B-Deselect
Deselect
B-Deselect B-Deselect
Write
B-Deselect B-Deselect
DQ (B2)
D32
Q21
D31
Q51
CQ (B2)
CQ (B2)
t
KHCZ
t
KHCX1
CK
相關(guān)PDF資料
PDF描述
CXK79M72C164GB MEMORY-SigmaRAM 16Meg 1x1z HSTL I/O (256K x 72) (27 pages 368K Rev. 7/6/01)
CXK79M72C165GB MEMORY-SigmaRAM 16Meg 1x1z LVCMOS I/O (256K x 72) (27 pages 364K Rev. 7/6/01)
CXO-M10 Telecommunication IC
CXO-MS10 Telecommunication IC
CXO23HG4I50.0KHZ Peripheral IC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CXK79M72C164GB 制造商:SONY 制造商全稱:Sony Corporation 功能描述:18Mb 1x1Dp HSTL High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36)
CXK79M72C165GB 制造商:SONY 制造商全稱:Sony Corporation 功能描述:18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36)
CXK79M72C165GB-4 制造商:SONY 功能描述:
CXK900L-S 制造商:CHDS 功能描述:HEAT SINK 130x30x10mm
CX-L0612A 制造商:KYOCERA Corporation 功能描述:INVERTER FOR 5.7" DISPLAYS
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