參數(shù)資料
型號(hào)： CXK79M36C160GB
英文描述： MEMORY-SigmaRAM 16Meg 1x1 HSTL I/O (512K x 36) (27 pages 364K Rev. 7/6/01)
中文描述： 內(nèi)存SigmaRAM 16Meg 1x1 HSTL的I / O（為512k × 36）（27頁(yè)364K牧師7/6/01）
文件頁(yè)數(shù)： 18/30頁(yè)
文件大?。?/td> 554K
代理商： CXK79M36C160GB
SONY
Σ
RAM CXK79M72C160GB / CXK79M36C160GB / CXK79M18C160GB
Preliminary
18Mb 1x1Lp, HSTL, rev 1.0
18 / 30
July 19, 2002
Two Bank Read-Write-Read Timing Diagram
Note
:
In the diagram above, two Deselect operations are inserted between Read and Write operations to control the data bus transition
from output to input. This depiction is for clarity purposes only. It is NOT a requirement. Depending on the application, one Deselect op-
eration may be sufficient.
Note
: Bank 1 EP1 = “l(fā)ow”, Bank 2 EP1 “high”, and Bank 1 and Bank 2 E2 = EP2 in this example (not shown).
A2
A3
A4
A5
A
E1
DQ (B1)
Q11
D41
Q12
A1
B-Deselect
R-Continue
B-Deselect
Read
B-Deselect
Deselect
Write
B-Deselect
W-Continue B-Deselect
Read
Deselect
B-Deselect
Deselect
Figure 4
CK
CQ (B1)
CQ (B1)
ADV
W
Bx
E2
B1:
B2:
Read
B-Deselect
Deselect
B-Deselect B-Deselect
Write
B-Deselect B-Deselect
DQ (B2)
D32
Q21
D31
Q51
CQ (B2)
CQ (B2)
t
KHCZ
t
KHCX1
CK
相關(guān)PDF資料
PDF描述
CXK79M36C161GB MEMORY-SigmaRAM 16Meg 1x1 LVCMOS I/O (512K x 36) (27 pages 364K Rev. 7/6/01)
CXK79M36C163GB MEMORY-SigmaRAM 16Meg 1x2 LVCMOX I/O (512K x 36) (25 pages 360K Rev. 7/6/01)
CXK79M36C164GB MEMORY-SigmaRAM 16Meg 1x1z HSTL I/O (512K x 36) (27 pages 368K Rev. 7/6/01)
CXK79M36C165GB MEMORY-SigmaRAM 16Meg 1x1z LVCMOS I/O (512K x 36) (27 pages 364K Rev. 7/6/01)
CXK79M72C160GB MEMORY-SigmaRAM 16Meg 1x1 HSTL I/O (256K x 72) (27 pages 364K Rev. 7/6/01)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CXK79M36C161GB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY-SigmaRAM 16Meg 1x1 LVCMOS I/O (512K x 36) (27 pages 364K Rev. 7/6/01)
CXK79M36C162GB 制造商:SONY 制造商全稱:Sony Corporation 功能描述:18Mb 1x2Lp HSTL High Speed Synchronous SRAMs (512Kb x 36)
CXK79M36C162GB-33 制造商:SONY 制造商全稱:Sony Corporation 功能描述:18Mb 1x2Lp HSTL High Speed Synchronous SRAMs (512Kb x 36)
CXK79M36C162GB-4 制造商:SONY 制造商全稱:Sony Corporation 功能描述:18Mb 1x2Lp HSTL High Speed Synchronous SRAMs (512Kb x 36)
CXK79M36C162GB-5 制造商:SONY 制造商全稱:Sony Corporation 功能描述:18Mb 1x2Lp HSTL High Speed Synchronous SRAMs (512Kb x 36)
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