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參數(shù)資料
| 型號(hào)： | CXK79M36C160GB |
| 英文描述： | MEMORY-SigmaRAM 16Meg 1x1 HSTL I/O (512K x 36) (27 pages 364K Rev. 7/6/01) |
| 中文描述： | 內(nèi)存SigmaRAM 16Meg 1x1 HSTL的I / O（為512k × 36）（27頁(yè)364K牧師7/6/01） |
| 文件頁(yè)數(shù)： | 14/30頁(yè) |
| 文件大?。?/td> | 554K |
| 代理商： | CXK79M36C160GB |
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SONY
Σ
RAM CXK79M72C160GB / CXK79M36C160GB / CXK79M18C160GB
Preliminary
18Mb 1x1Lp, HSTL, rev 1.0
14 / 30
July 19, 2002
AC Electrical Characteristics (Note)
The two AC timing parameters listed below are tested according to specific combinations of Output Clocks (CQs) and Out-
put Data (DQs):
1. t
CHQV
-
Output Clock High to Output Data Valid (max)
2. t
CHQX
-
Output Clock High to Output Data Hold (min)
The specific CQ / DQ combinations are defined as follows:
256Kb x 72
512Kb x 36
1Mb x 18
CQs
DQs
CQs
DQs
CQs
DQs
1K, 2K
1A, 2A, 1B, 2B, 1C, 2C,
1D, 2D, 1E, 2E, 1F, 2F,
1G, 2G, 1H, 2H, 1J, 2J, 1L,
2L, 1M, 2M, 1N, 2N, 1P,
2P, 2R, 1R, 1T, 2T,
1U, 2U, 1V, 2V, 1W, 2W
1K, 2K
2E, 1F, 2F, 1G, 2G, 1H,
2H, 1J, 2J, 1R, 1T, 2T,
1U, 2U, 1V, 2V, 1W, 2W
1K, 2K
2E, 1F, 2F, 1G, 2G, 1H,
2H, 1J, 2J
10K, 11K
10A, 11A, 10B, 11B,
10C, 11C, 10D, 11D, 11E,
10E, 10F, 11F, 10G, 11G,
10H, 11H, 10J, 11J,
10L, 11L, 10M, 11M,
10N, 11N, 10P, 11P, 10R,
11R, 10T, 11T, 10U, 11U,
10V, 11V, 10W, 11W
10K, 11K
10A, 11A, 10B, 11B,
10C, 11C, 10D, 11D, 11E,
10L, 11L, 10M, 11M,
10N, 11N, 10P, 11P, 10R
10K, 11K
10L, 11L, 10M, 11M,
10N, 11N, 10P, 11P, 10R
相關(guān)PDF資料 |
PDF描述 |
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| CXK79M36C161GB | MEMORY-SigmaRAM 16Meg 1x1 LVCMOS I/O (512K x 36) (27 pages 364K Rev. 7/6/01) |
| CXK79M36C163GB | MEMORY-SigmaRAM 16Meg 1x2 LVCMOX I/O (512K x 36) (25 pages 360K Rev. 7/6/01) |
| CXK79M36C164GB | MEMORY-SigmaRAM 16Meg 1x1z HSTL I/O (512K x 36) (27 pages 368K Rev. 7/6/01) |
| CXK79M36C165GB | MEMORY-SigmaRAM 16Meg 1x1z LVCMOS I/O (512K x 36) (27 pages 364K Rev. 7/6/01) |
| CXK79M72C160GB | MEMORY-SigmaRAM 16Meg 1x1 HSTL I/O (256K x 72) (27 pages 364K Rev. 7/6/01) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CXK79M36C161GB | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:MEMORY-SigmaRAM 16Meg 1x1 LVCMOS I/O (512K x 36) (27 pages 364K Rev. 7/6/01) |
| CXK79M36C162GB | 制造商:SONY 制造商全稱(chēng):Sony Corporation 功能描述:18Mb 1x2Lp HSTL High Speed Synchronous SRAMs (512Kb x 36) |
| CXK79M36C162GB-33 | 制造商:SONY 制造商全稱(chēng):Sony Corporation 功能描述:18Mb 1x2Lp HSTL High Speed Synchronous SRAMs (512Kb x 36) |
| CXK79M36C162GB-4 | 制造商:SONY 制造商全稱(chēng):Sony Corporation 功能描述:18Mb 1x2Lp HSTL High Speed Synchronous SRAMs (512Kb x 36) |
| CXK79M36C162GB-5 | 制造商:SONY 制造商全稱(chēng):Sony Corporation 功能描述:18Mb 1x2Lp HSTL High Speed Synchronous SRAMs (512Kb x 36) |
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