
5
CS5132H
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Electrical Characteristics: 0°C < TA < 70°C; 0°C < TJ < 125°C; VOUT2 ≤ 3.5V, 9V ≤ VCC1 ≤ 14V, 9V ≤ VCC2 ≤ 20V; 2.0V DAC Code
(VID4= VID3 = VID2 = VID1 = 0, VID0 = 1), CGATE(H) = CGATE(L) = CGATE = 3.3nF, COFF = 390pF; Unless otherwise stated.
Input Pull-up Resistance
VID4, VID3, VID2, VID1, VID0
25
50
100
k
Pull-up Voltage
5.48
5.65
5.82
V
s GATE(H) and GATE(L)
High Voltage at 100mA
Measure VCC1/2 –GATE(L)/(H)
1.2
2.1
V
Low Voltage at 100mA
Measure GATE(L)/(H)
1.0
1.5
V
Rise Time
1.6V < GATE(H)/(L) < (VCC1/2 – 2.5V)
40
80
ns
Fall Time
(VCC1/2 – 2.5V) > GATE(L)/(H) > 1.6V
40
80
ns
GATE(H) to GATE(L) Delay
GATE(H)<2V, GATE(L)>2V
30
65
100
ns
GATE(L) to GATE(H) Delay
GATE(L)<2V, GATE(H)>2V
30
65
100
ns
GATE pull-down
Resistance to PGnd (Note 1)
20
50
115
k
s VCORE Overcurrent Protection
OVC Comparator Offset Voltage
0V < VOUT1 ≤ 3.5V
77
86
101
mV
Discharge Threshold Voltage
0.2
0.25
0.3
V
VOUT1 Bias Current
0.2V ≤ VOUT1 ≤ 3.5V
-7.0
0.1
7.0
A
OVC Latch Discharge Current
VCOMP = 1V
100
800
2500
A
s PWM Comparator 1
PWM Comparator Offset Voltage 0V ≤ VFFB1 ≤ 3.5V
0.95
1.06
1.18
V
Transient Response
VFFB1 = 0 to 3.5V
200
300
ns
VFFB1 Bias Current
0.2V ≤ VFFB1 ≤ 3.5V
-7.0
0.1
7.0
A
s COFF1
Off-Time
1.0
1.6
2.3
s
Charge Current
VCOFF1 = 1.5V
550
A
Discharge Current
VCOFF1 = 1.5V
25
mA
s Power-Good Output
PWRGD Sink Current
VFB1 = 1.7V, VPWRGD = 5V
0.5
4
15
mA
PWRGD Upper Threshold
% of nominal DAC code
5
8.5
12
%
PWRGD Lower Threshold
% of nominal DAC code
-12
-8.5
-5
%
PWRGD Output Low Voltage
VFB1 = 1.7V, IPWRGD = 500A
0.2
0.3
V
s Overvoltage Protection (OVP) Output
OVP Source Current
OVP = 1V
1
10
25
mA
OVP Threshold
% of nominal DAC code
5
8.5
12
%
OVP Pull-up Voltage
IOVP = 1mA, VCC1 - VOVP
1.1
1.5
V
s VI/O Switching Regulator Error Amplifier
VFB2 Bias Current
VFB2 = 0V
-1.0
0.1
1.0
A
COMP2 Source Current
COMP2 = 1.2V to 3.6V; VFB2 = 1V
15
30
60
A
COMP2 Sink Current
COMP2=1.2V; VFB2=1.4V;
30
60
120
A
Open Loop Gain
CCOMP2 = 0.1F
80
dB