參數(shù)資料
型號: CR03AM-8
英文描述: CR03AM-8 CR03AM-12 Datasheet 92K/MAR.20.03
中文描述: CR03AM - 8 CR03AM - 12數(shù)據(jù)92K/MAR.20.03
文件頁數(shù): 6/6頁
文件大?。?/td> 90K
代理商: CR03AM-8
Sep.2000
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR03AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
2 3
10
0
5 710
1
2 3 5 710
2
2 3 5 710
3
200
180
0
80
100
120
160
140
40
60
20
T
j
= 25
°
C
R
GK
= 1k
T
j
= 110
°
C
10
2
2 3 4
10
0
5 7 10
1
2
4
3
5 7 10
2
10
4
10
3
7
5
4
3
2
7
5
4
3
2
2 3
10
–2
10
–1
5 7
2 3 5 710
0
2 3 5 710
1
0
100
200
300
400
500
160
120
60
40
20
140
100
80
0
–40
120
0
40
80
–20
20
60
100
TYPICAL EXAMPLE
60
–20
–40
–60
0
20 40
80 100120140
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
R
GK
= 1k
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
H
JUNCTION TEMPERATURE (
°
C)
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
H
GATE TO CATHODE RESISTANCE (k
)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
G
μ
A
GATE TRIGGER PULSE WIDTH (
μ
s)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/
μ
s)
1
B
μ
s
B
μ
s
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°
C)
1
R
j
=
°
C
R
j
=
°
C
DISTRIBUTION
I
GT
(25
°
C) = 35
μ
A
TYPICAL EXAMPLE
V
D
= 12V, T
j
= 25
°
C
# 2
# 1
TYPICAL EXAMPLE
I
GT
(25
°
C) I
H
(1k
)
# 1 10
μ
A 1.0mA
# 2 26
μ
A 1.1mA
T
j
= 25
°
C
TYPICAL EXAMPLE
I
GT
(DC)
# 1 16
μ
A
# 2 65
μ
A
# 1
# 2
相關PDF資料
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