
Sep.2000
TYPE
NAME
VOLTAGE
CLASS
φ
5.0 MAX
4.4
5
1
3
1
1.25 1.25
CIRCUMSCRIBE
CIRCLE
φ
0.7
1
3
2
OUTLINE DRAWING
Dimensions
in mm
JEDEC : TO-92
2
1
3
1
2
3
CATHODE
ANODE
GATE
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR03AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR03AM
APPLICATION
Leakage protector, timer, gas ignitor
8
1. With gate to cathode resistance R
GK
=1k
.
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
—
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine half wave, 180
°
conduction, T
a
=47
°
C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
A
2
s
W
W
V
V
A
°
C
°
C
g
Ratings
0.47
0.3
20
1.6
0.5
0.1
6
6
0.3
–40 ~ +110
–40 ~ +125
0.23
I
T (AV)
........................................................................0.3A
V
DRM
..............................................................400V/600V
I
GT
.........................................................................100
μ
A
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
8
1
DC off-state voltage
8
1
8
1
Voltage class
Unit
V
V
V
V
V
V
MAXIMUM RATINGS
8
400
500
320
400
500
320
12
600
800
480
600
800
480