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參數(shù)資料
| 型號(hào)： | CR03AM-8 |
| 英文描述： | CR03AM-8 CR03AM-12 Datasheet 92K/MAR.20.03 |
| 中文描述： | CR03AM - 8 CR03AM - 12數(shù)據(jù)92K/MAR.20.03 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 90K |
| 代理商： | CR03AM-8 |
Sep.2000
3V
DC
I
GS
I
GT
6V
DC
60
V
GT
2
1
TUT
1k
SWITCH
R
GK
A3
A2
V1
A1
SWITCH 1 : I
GT
measurement
SWITCH 2 : V
GT
measurement
(Inner resistance of voltage meter is about 1k
)
8
3. I
GT
, V
GT
measurement circuit.
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR03AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
I
RRM
I
DRM
V
TM
V
GT
V
GD
I
GT
I
H
R
th (j-a)
Test conditions
T
j
=110
°
C, V
RRM
applied
T
j
=110
°
C, V
DRM
applied, R
GK
=1k
T
a
=25
°
C, I
TM
=4A, instantaneous value
T
j
=25
°
C, V
D
=6V, I
T
=0.1A
8
3
Tj=110
°
C, V
D
=1/2V
DRM
, R
GK
=1k
T
j
=25
°
C, V
D
=6V, I
T
=0.1A
8
3
T
j
=25
°
C, V
D
=12V, R
GK
=1k
Junction to ambient
Unit
mA
mA
V
V
V
μ
A
mA
°
C/W
Typ.
—
—
—
—
—
—
1.5
—
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
Limits
Min.
—
—
—
—
0.2
1
—
—
Max.
0.1
0.1
1.8
0.8
—
100
8
2
3
180
8
2.If special values of I
GT
are required, choose at least two items from those listed in the table below. (Example: AB, BC)
B
20 ~ 50
C
40 ~ 100
Item
I
GT
(
μ
A)
A
1 ~ 30
The above values do not include the current flowing through the 1k
resistance between the gate and cathode.
PERFORMANCE CURVES
3.8
0.6
1.4
2.2
3.0
1.0
1.8
2.6
3.4
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
7
5
3
2
10
–2
T
a
= 25
°
C
10
0
2 3
5 7 10
1
8
4
2 3
5 7 10
2
4
4
12
16
20
6
2
0
10
14
18
MAXIMUM ON-STATE CHARACTERISTICS
O
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
S
CONDUCTION TIME
(CYCLES AT 60Hz)
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| CR03AMG-12-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:THYRISTOR |
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| CR03T10NJ22R | 制造商:HI-SINCERITY 功能描述: |
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