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參數(shù)資料
| 型號： | CR03AM-8 |
| 英文描述： | CR03AM-8 CR03AM-12 Datasheet 92K/MAR.20.03 |
| 中文描述： | CR03AM - 8 CR03AM - 12數(shù)據(jù)92K/MAR.20.03 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 90K |
| 代理商： | CR03AM-8 |
Sep.2000
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR03AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
10
2
10
–2
10
0
10
1
10
1
7
5
3
2
10
–1
7
5
3
2
10
0
7
5
3
2
7
5
3
2
57
2 3 57
10
–1
10
2
2 3 57
2 3 5
2 3 5
7
V
FGM
= 6V
V
GT
= 0.8V
(T
j
= 25
°
C)
I
GT
= 100
μ
A
(T
j
= 25
°
C)
P
GM
= 0.5W
P
G(AV)
= 0.1W
V
GD
= 0.2V
I
FGM
= 0.3A
2 3
10
–3
5 710
–2
2 3 5 710
–1
2 3 5 710
0
200
0
80
100
120
140
160
180
40
60
20
2 3
10
0
5 710
1
2 3 5 710
2
2 3 5 710
3
60
–20
–40
0
20
40
80 100
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
120
TYPICAL EXAMPLE
1.0
0.8
0.7
0.6
0.3
0.4
0.1
060–40–20
20
80
140
120
0.2
0.5
0.9
0
60
40
100
160
120
60
40
20
140
100
80
00
0.2
0.4
0.1
0.3
0.5
θ
= 30
°
60
°
120
°
90
°
180
°
θ
360
°
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
0.3
0.2
0.1
0.4
0
0.5
0.4
0
0.1
0.2
0.3
0.5
θ
= 30
°
60
°
120
°
90
°
180
°
θ
360
°
RESISTIVE,
INDUCTIVE
LOADS
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
A
AVERAGE ON-STATE CURRENT (A)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
G
JUNCTION TEMPERATURE (
°
C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
T
°
C
TIME (s)
GATE CHARACTERISTICS
G
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°
C)
1
G
j
=
°
C
G
j
=
°
C
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
A
°
C
AVERAGE ON-STATE CURRENT (A)
DISTRIBUTION
I
GT
(25
°
C) = 35
μ
A
TYPICAL EXAMPLE
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| CR10TE | PHOTOTRANSISTOR | NPN | 850NM PEAK WAVELENGTH | 1M | CHIP |
| CR123A | Battery |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CR03AMG-12-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:THYRISTOR |
| CR03AMG-12-T92-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:THYRISTOR |
| CR03T05NF392R | 制造商:HISINCERITY 功能描述: |
| CR03T10NJ22R | 制造商:HI-SINCERITY 功能描述: |
| CR03-WCS-N123 | 制造商:MAJOR 功能描述: |
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