參數(shù)資料
型號(hào)： CPV362M4FPBF
廠商： VISHAY SEMICONDUCTORS
元件分類： 電源模塊
英文描述： Trans IGBT Module N-CH 600V 8.8A 13-Pin IMS-2
中文描述： IGBT Transistors 600 Volt 4.8 Amp
文件頁(yè)數(shù)： 2/9頁(yè)
文件大?。?/td> 219K
代理商： CPV362M4FPBF
CPV362M4FPbF
www.vishay.com
Vishay Semiconductors
Revision: 11-Jun-13
2
Document Number: 94361
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Collector to emitter breakdown voltage
V(BR)CES
VGE = 0 V, IC = 250 μA
Pulse width
80 μs, duty factor 0.1 %
600
-
V
Temperature coeff. of breakdown voltage
V
(BR)CES TJ
VGE = 0 V, IC = 1.0 mA
-
0.72
-
V/°C
Collector to emitter saturation voltage
VCE(on)
IC = 4.8 A
VGE = 15 V
See fig. 2, 5
-
1.41
1.7
V
IC = 8.8 A
-
1.66
-
IC = 4.8 A, TJ = 150 °C
-
1.42
-
Gate threshold voltage
VGE(th)
VCE = VGE, IC = 250 μA
3.0
-
6.0
Gate to emitter leakage current
IGES
VGE = ± 20 V
-
± 100
nA
Temperature coeff. of threshold voltage
V
GE(th) /TJ
VGE = 0 V, IC = 1.0 mA
-11
-
mV/°C
Forward transconductance
gfe
VCE = 100 V, IC = 4.8 A
Pulse width 5.0 μs; single shot
2.9
5.0
-
S
Zero gate voltage collector current
ICES
VGE = 0 V, VCE = 600 V
-
250
μA
VGE = 0 V, VCE = 600 V, TJ = 150 °C
-
1700
Diode forward voltage drop
VFM
IC = 8.0 A
IC = 8.0 A, TJ = 150 °C
See fig. 13
-1.4
1.7
V
-1.3
1.6
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Total gate charge (turn on)
Qg
IC = 4.8 A
VCC = 400 V
See fig. 8
-30
45
nC
Gate to emitter charge (turn on)
Qge
-4.0
6.0
Gate to collector charge
Qgc
-13
20
Turn-on delay time
td(on)
TJ = 25 °C
IC = 4.8 A, VCC = 480 V
VGE = 15 V, RG = 50
Energy losses include “tail” and
diode reversev recovery.
See fig. 9, 10, 18
-49-
ns
Rise time
tr
-22-
Turn-off delay time
td(off)
-
200
300
Fall time
tf
-
214
320
Turn-on switching loss
Eon
-0.23
-
mJ
Turn-off switching loss
Eoff
-0.33
-
Total switching loss
Ets
-
0.45
0.70
Turn-on delay time
td(on)
TJ = 150 °C,
IC = 4.8 A, VCC = 480 V
VGE = 15 V, RG = 50
Energy losses include “tail” and
diode reverse recovery
See fig. 10, 11, 18
-48-
ns
Rise time
tr
-25-
Turn-off delay time
td(off)
-
435
-
Fall time
tf
-
364
-
Total switching loss
Ets
-0.93
-
mJ
Input capacitance
Cies
VGE = 0 V
VCC = 30 V
See fig. 7
-
340
-
pF
Output capacitance
Coes
-63-
Reverse transfer capacitance
Cres
-5.9
-
Diode reverse recovery time
trr
TJ = 25 °C
See fig. 14
IF = 8.0 A
VR = 200 V
dI/dt = 200 A/μs
-37
55
ns
TJ = 125 °C
-
55
90
Diode peak reverse recovery current
Irr
TJ = 25 °C
See fig. 15
-3.5
50
A
TJ = 125 °C
-
4.5
8.0
Diode reverse recovery charge
Qrr
TJ = 25 °C
See fig. 16
-
65
138
nC
TJ = 125 °C
-
124
360
Diode peak rate of fall of recovery during tb
dI(rec)M /dt
TJ = 25 °C
See fig. 17
-
240
-
A/μs
TJ = 125 °C
-
210
-
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CPV362M4K 功能描述:IGBT SIP MODULE 600V 31 IMS-2 RoHS:否 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開(kāi)）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
CPV362M4U 功能描述:IGBT SIP MODULE 600V 3.9A IMS-2 RoHS:否 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開(kāi)）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
CPV362M4UPBF 制造商:Vishay Intertechnologies 功能描述:IGBT Module N-CH 7.2A 600V IMS-2
CPV362MF 制造商:IRF 制造商全稱:International Rectifier 功能描述:IGBT SIP MODULE Fast IGBT
CPV362MK 制造商:IRF 制造商全稱:International Rectifier 功能描述:IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
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